ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs
Electrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage...
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doaj-13db494a31fb42a487835b93a77450242021-01-16T00:01:05ZengMDPI AGElectronics2079-92922021-01-011017817810.3390/electronics10020178ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSsShi-Zhe Hong0Shen-Li Chen1Department of Electronic Engineering, National United University, Miaoli City 36063, TaiwanDepartment of Electronic Engineering, National United University, Miaoli City 36063, TaiwanElectrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage 60-V n-channel laterally diffused metal-oxide–semiconductor transistor (nLDMOS) element. The effect of the on-voltage characteristics of cascade Schottky diodes on ESD protection was investigated. By using a transmission-line pulse tester, the trigger voltage, holding voltage, and secondary breakdown current (I<sub>t2</sub>) of the nLDMOS element were determined using the I–V characteristic. As the N<sup>+</sup> area was gradually replaced by the parasitic Schottky area at the drain electrode, an equivalent circuit of series Schottky diodes formed, which increased the on-resistance. The larger the Schottky area was the higher the I<sub>t2</sub> value was. This characteristic can considerably improve the ESD immunity of nLDMOS components (highest improvement of 104%). This is a good strategy for improving ESD reliability without increasing the production steps and fabrication cost.https://www.mdpi.com/2079-9292/10/2/178electrostatic discharge (ESD)holding voltage (V<sub>h</sub>)lateral diffusion MOS (LDMOS)schottky diodesecondary breakdown current (I<sub>t2</sub>)transmission-line pulse system (TLP system) |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Shi-Zhe Hong Shen-Li Chen |
spellingShingle |
Shi-Zhe Hong Shen-Li Chen ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs Electronics electrostatic discharge (ESD) holding voltage (V<sub>h</sub>) lateral diffusion MOS (LDMOS) schottky diode secondary breakdown current (I<sub>t2</sub>) transmission-line pulse system (TLP system) |
author_facet |
Shi-Zhe Hong Shen-Li Chen |
author_sort |
Shi-Zhe Hong |
title |
ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs |
title_short |
ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs |
title_full |
ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs |
title_fullStr |
ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs |
title_full_unstemmed |
ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs |
title_sort |
esd design and analysis by drain electrode-embedded horizontal schottky elements for hv nldmoss |
publisher |
MDPI AG |
series |
Electronics |
issn |
2079-9292 |
publishDate |
2021-01-01 |
description |
Electrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage 60-V n-channel laterally diffused metal-oxide–semiconductor transistor (nLDMOS) element. The effect of the on-voltage characteristics of cascade Schottky diodes on ESD protection was investigated. By using a transmission-line pulse tester, the trigger voltage, holding voltage, and secondary breakdown current (I<sub>t2</sub>) of the nLDMOS element were determined using the I–V characteristic. As the N<sup>+</sup> area was gradually replaced by the parasitic Schottky area at the drain electrode, an equivalent circuit of series Schottky diodes formed, which increased the on-resistance. The larger the Schottky area was the higher the I<sub>t2</sub> value was. This characteristic can considerably improve the ESD immunity of nLDMOS components (highest improvement of 104%). This is a good strategy for improving ESD reliability without increasing the production steps and fabrication cost. |
topic |
electrostatic discharge (ESD) holding voltage (V<sub>h</sub>) lateral diffusion MOS (LDMOS) schottky diode secondary breakdown current (I<sub>t2</sub>) transmission-line pulse system (TLP system) |
url |
https://www.mdpi.com/2079-9292/10/2/178 |
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