ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Electrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage...

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Bibliographic Details
Main Authors: Shi-Zhe Hong, Shen-Li Chen
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Electronics
Subjects:
electrostatic discharge (ESD)
holding voltage (V<sub>h</sub>)
lateral diffusion MOS (LDMOS)
schottky diode
secondary breakdown current (I<sub>t2</sub>)
transmission-line pulse system (TLP system)
Online Access:https://www.mdpi.com/2079-9292/10/2/178

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https://www.mdpi.com/2079-9292/10/2/178

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