Optimization of SAW Devices with LGS/Pt Structure for Sensing Temperature

Research has shown that SAW (surface acoustic wave) devices with an LGS/Pt (langasite La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub>/platinum) structure are useful in high-temperature sensor applications. Extreme high temperature brings great acoustic attenuation be...

Full description

Bibliographic Details
Main Authors: Xueling Li, Wen Wang, Shuyao Fan, Yining Yin, Yana Jia, Yong Liang, Mengwei Liu
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/20/9/2441
Description
Summary:Research has shown that SAW (surface acoustic wave) devices with an LGS/Pt (langasite La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub>/platinum) structure are useful in high-temperature sensor applications. Extreme high temperature brings great acoustic attenuation because of the thermal radiation loss, which requires that the sensing device offer a sufficiently high quality factor (Q) and a low loss. Therefore, it is necessary to improve the performance of the quality factor as much as possible so as to better meet the application of high-temperature sensors. Based on these reasons, the main work of this paper was to extract accurate simulation parameters to optimize the Pt/LGS device and obtain Q-value device parameters. Optimization of SAW devices with LGS/Pt structure for sensing extreme high temperature was addressed by employing a typical coupling of modes (COM) model in this work. Using the short pulse method, the reflection coefficient of Pt electrodes on LGS substrate was extracted accurately by characterizing the prepared SAW device with strategic design. Other relevant parameters for COM simulation were determined by finite element analysis. To determine the optimal design parameters, the COM simulation was conducted on the SAW sensing device with a one-port resonator pattern for sensing extreme temperature, which allows for a larger Q-value and low insertion loss. Experimental results validate the theoretical simulation. In addition, the corresponding high-temperature characteristics of the prepared sensing device were investigated.
ISSN:1424-8220