Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE
The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the latti...
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Series: | Journal of Nanomaterials |
Online Access: | http://dx.doi.org/10.1155/2012/929278 |
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doaj-147ab51c7197439485388b4b3cb4ffd62020-11-25T00:01:47ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292012-01-01201210.1155/2012/929278929278Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBEShao-Ying Ting0Po-Ju Chen1Hsiang-Chen Wang2Che-Hao Liao3Wen-Ming Chang4Ya-Ping Hsieh5C. C. Yang6Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, TaiwanGraduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 62102, TaiwanGraduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 62102, TaiwanInstitute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, TaiwanInstitute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, TaiwanGraduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 62102, TaiwanInstitute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, TaiwanThe material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.http://dx.doi.org/10.1155/2012/929278 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Shao-Ying Ting Po-Ju Chen Hsiang-Chen Wang Che-Hao Liao Wen-Ming Chang Ya-Ping Hsieh C. C. Yang |
spellingShingle |
Shao-Ying Ting Po-Ju Chen Hsiang-Chen Wang Che-Hao Liao Wen-Ming Chang Ya-Ping Hsieh C. C. Yang Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE Journal of Nanomaterials |
author_facet |
Shao-Ying Ting Po-Ju Chen Hsiang-Chen Wang Che-Hao Liao Wen-Ming Chang Ya-Ping Hsieh C. C. Yang |
author_sort |
Shao-Ying Ting |
title |
Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE |
title_short |
Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE |
title_full |
Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE |
title_fullStr |
Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE |
title_full_unstemmed |
Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE |
title_sort |
crystallinity improvement of zno thin film on different buffer layers grown by mbe |
publisher |
Hindawi Limited |
series |
Journal of Nanomaterials |
issn |
1687-4110 1687-4129 |
publishDate |
2012-01-01 |
description |
The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth. |
url |
http://dx.doi.org/10.1155/2012/929278 |
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