Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells
Exact closed-form expressions have been derived for the stresses and the electric fields induced in piezoelectric multilayers deposited on a substrate with lattice misfit and thermal expansion coefficient mismatch. The derived formulations can model any number of layers using recursive relations tha...
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doaj-15452ca127254cdd9f8176aa514363092020-11-25T00:57:33ZengAIP Publishing LLCAIP Advances2158-32262017-07-0177075306075306-1410.1063/1.4991836071706ADVModeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wellsDhaneshwar Mishra0Soong Hyeong Lee1Youjung Seo2Y. Eugene Pak3Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270, South KoreaDepartment of Physics, Ajou University, Suwon 443-749, South KoreaAdvanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270, South KoreaAdvanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270, South KoreaExact closed-form expressions have been derived for the stresses and the electric fields induced in piezoelectric multilayers deposited on a substrate with lattice misfit and thermal expansion coefficient mismatch. The derived formulations can model any number of layers using recursive relations that minimize the computation time. A proper rotation matrix has been utilized to generalize the expressions so that they can be used for various growth orientations with each layer having hexagonal crystal symmetry. As an example, the influence of lattice misfit and thermal expansion coefficient mismatch on the state of electroelastic fields in different layers of GaN multi quantum wells has been examined. A comparison with the finite element analysis results showed very close agreement. The analytical expressions developed herein will be useful in designing optoelectronic devices as well as in predicting defect density in multi quantum wells.http://dx.doi.org/10.1063/1.4991836 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Dhaneshwar Mishra Soong Hyeong Lee Youjung Seo Y. Eugene Pak |
spellingShingle |
Dhaneshwar Mishra Soong Hyeong Lee Youjung Seo Y. Eugene Pak Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells AIP Advances |
author_facet |
Dhaneshwar Mishra Soong Hyeong Lee Youjung Seo Y. Eugene Pak |
author_sort |
Dhaneshwar Mishra |
title |
Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells |
title_short |
Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells |
title_full |
Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells |
title_fullStr |
Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells |
title_full_unstemmed |
Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells |
title_sort |
modeling of stresses and electric fields in piezoelectric multilayer: application to multi quantum wells |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2017-07-01 |
description |
Exact closed-form expressions have been derived for the stresses and the electric fields induced in piezoelectric multilayers deposited on a substrate with lattice misfit and thermal expansion coefficient mismatch. The derived formulations can model any number of layers using recursive relations that minimize the computation time. A proper rotation matrix has been utilized to generalize the expressions so that they can be used for various growth orientations with each layer having hexagonal crystal symmetry. As an example, the influence of lattice misfit and thermal expansion coefficient mismatch on the state of electroelastic fields in different layers of GaN multi quantum wells has been examined. A comparison with the finite element analysis results showed very close agreement. The analytical expressions developed herein will be useful in designing optoelectronic devices as well as in predicting defect density in multi quantum wells. |
url |
http://dx.doi.org/10.1063/1.4991836 |
work_keys_str_mv |
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