A Carbon Nanotube Electrode a-IGZO-TFT

A Carbon Nanotube Electrode a-IGZO-TFT

In this paper, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using carbon nanotubes (CNTs) as source/drain/gate electrodes have been proposed and experimentally realized. Effect of the annealing temperature on the contact properties between a-IGZO and single-walled carbon...

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Bibliographic Details
Main Authors: Kai Zhu, Lei Wen, Min Zhang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Amorphous indium gallium zinc oxide
electrodes
carbon nanotubes
thin film transistors
Online Access:https://ieeexplore.ieee.org/document/7948808/
Description
Summary:In this paper, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using carbon nanotubes (CNTs) as source/drain/gate electrodes have been proposed and experimentally realized. Effect of the annealing temperature on the contact properties between a-IGZO and single-walled carbon nanotube (SWNT) electrodes, as well as the electrical properties of the a-IGZO TFTs have been investigated. The contact performance between SWNT electrodes and a-IGZO active layer has been improved by increasing the annealing temperature. The resulting a-IGZO TFT with SWNT electrodes shows an effective mobility of 8 cm<sup>2</sup>/V&#x00B7;s and an on/off current ratio of 1.9 &#x00D7; 10<sup>7</sup> under a drain voltage of 10 V. This SWNT-electrode a-IGZO TFT design makes it possible for CNTs as electrodes of the metal oxide TFT.
ISSN:2168-6734

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