The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar Cell

Overall, CdSe:Ag+ quantum dots were prepared by the successive ionic layer absorption and reaction method using two solutions: mixing molar concentrations of 0.003 mM AgNO3 and a Cd(CH3COO)2·2H2O anion to make solution 1 and 2.27 g Se powder and 0.6 M Na2SO3 were dissolved in 100 ml deionized water,...

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Main Authors: Ha Thanh Tung, Dang Huu Phuc
Format: Article
Language:English
Published: Hindawi Limited 2019-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2019/1069308
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spelling doaj-16e63c2631ac4d679f8439c7b026ec4e2020-11-25T01:13:57ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2019-01-01201910.1155/2019/10693081069308The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar CellHa Thanh Tung0Dang Huu Phuc1Institute of Research and Development, Duy Tan University, Da Nang, VietnamLaboratory of Applied Physics, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, VietnamOverall, CdSe:Ag+ quantum dots were prepared by the successive ionic layer absorption and reaction method using two solutions: mixing molar concentrations of 0.003 mM AgNO3 and a Cd(CH3COO)2·2H2O anion to make solution 1 and 2.27 g Se powder and 0.6 M Na2SO3 were dissolved in 100 ml deionized water, solution 2. The FTO was coated with TiO2 nanoparticles and then was dipped in both solutions, which created a FTO/TiO2/CdSe:Ag+ photoanode with a thickness of 1 layer to 4 layers. The layers of the CdSe:Ag+ film show an effect on the morphology, crystalline structure, optical properties, and photovoltaic through optical and photovoltaic measurements. Finally, the performance of the device based on a FTO/TiO2/CdSe:Ag+ photoanode with the different thickness increased significantly to exactly 3.96%. Moreover, in the pattern of an explanation of the optical and photovoltaic properties of materials, we use Tauc’s theory to determine the band gap, the conduction band, and the valence band.http://dx.doi.org/10.1155/2019/1069308
collection DOAJ
language English
format Article
sources DOAJ
author Ha Thanh Tung
Dang Huu Phuc
spellingShingle Ha Thanh Tung
Dang Huu Phuc
The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar Cell
International Journal of Photoenergy
author_facet Ha Thanh Tung
Dang Huu Phuc
author_sort Ha Thanh Tung
title The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar Cell
title_short The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar Cell
title_full The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar Cell
title_fullStr The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar Cell
title_full_unstemmed The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar Cell
title_sort optimized thickness of silver doping on cds/cdse for quantum dot-sensitized solar cell
publisher Hindawi Limited
series International Journal of Photoenergy
issn 1110-662X
1687-529X
publishDate 2019-01-01
description Overall, CdSe:Ag+ quantum dots were prepared by the successive ionic layer absorption and reaction method using two solutions: mixing molar concentrations of 0.003 mM AgNO3 and a Cd(CH3COO)2·2H2O anion to make solution 1 and 2.27 g Se powder and 0.6 M Na2SO3 were dissolved in 100 ml deionized water, solution 2. The FTO was coated with TiO2 nanoparticles and then was dipped in both solutions, which created a FTO/TiO2/CdSe:Ag+ photoanode with a thickness of 1 layer to 4 layers. The layers of the CdSe:Ag+ film show an effect on the morphology, crystalline structure, optical properties, and photovoltaic through optical and photovoltaic measurements. Finally, the performance of the device based on a FTO/TiO2/CdSe:Ag+ photoanode with the different thickness increased significantly to exactly 3.96%. Moreover, in the pattern of an explanation of the optical and photovoltaic properties of materials, we use Tauc’s theory to determine the band gap, the conduction band, and the valence band.
url http://dx.doi.org/10.1155/2019/1069308
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