The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON)...

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Bibliographic Details
Main Authors:	César Moreno, Carmen Munuera, Xavier Obradors, Carmen Ocal
Format:	Article
Language:	English
Published:	Beilstein-Institut 2012-11-01
Series:	Beilstein Journal of Nanotechnology
Subjects:	conductive scanning probe micoscopy memristor 3-D modes resistive switching scanning probe microscopy
Online Access:	https://doi.org/10.3762/bjnano.3.82

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