Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects
The semiconductor silicon wafer with micro-crack defects was detected using infrared thermal wave imaging technique. The 3-D thermal conduction model in semiconductor silicon wafer excited by linear frequency modulated continuous laser was established, and it was solved by finite element...
Main Authors: | , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
VINCA Institute of Nuclear Sciences
2020-01-01
|
Series: | Thermal Science |
Subjects: | |
Online Access: | http://www.doiserbia.nb.rs/img/doi/0354-9836/2020/0354-98362006011T.pdf |
Summary: | The semiconductor silicon wafer with micro-crack defects was detected using
infrared thermal wave imaging technique. The 3-D thermal conduction model
in semiconductor silicon wafer excited by linear frequency modulated
continuous laser was established, and it was solved by finite element
method. The results show the effectiveness of the proposed method for
detecting micro-crack defects in semiconductor silicon wafers. |
---|---|
ISSN: | 0354-9836 2334-7163 |