Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects

The semiconductor silicon wafer with micro-crack defects was detected using infrared thermal wave imaging technique. The 3-D thermal conduction model in semiconductor silicon wafer excited by linear frequency modulated continuous laser was established, and it was solved by finite element...

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Main Authors:	Tang Qing-Ju, Gao Shuai-Shuai, Liu Yong-Jie, Wang Yun-Ze, Dai Jing-Min
Format:	Article
Language:	English
Published:	VINCA Institute of Nuclear Sciences 2020-01-01
Series:	Thermal Science
Subjects:	infrared thermal wave imaging technique micro-crack semiconductor silicon wafer infrared thermal imaging linear frequency finite element method
Online Access:	http://www.doiserbia.nb.rs/img/doi/0354-9836/2020/0354-98362006011T.pdf

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record_format	Article
spelling	doaj-1a054bf896fd4dc9ac37b12d118dc1b02021-02-05T08:41:46ZengVINCA Institute of Nuclear SciencesThermal Science0354-98362334-71632020-01-01246 Part B4011401710.2298/TSCI2006011T0354-98362006011TTheoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defectsTang Qing-Ju0Gao Shuai-Shuai1Liu Yong-Jie2Wang Yun-Ze3Dai Jing-Min4School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, China + School of Mechanical Engineering, Heilongjiang University of Science and Technology, Harbin, ChinaSchool of Mechanical Engineering, Heilongjiang University of Science and Technology, Harbin, ChinaSchool of Mechanical Engineering, Heilongjiang University of Science and Technology, Harbin, ChinaSchool of Mechanical Engineering, Heilongjiang University of Science and Technology, Harbin, ChinaSchool of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, ChinaThe semiconductor silicon wafer with micro-crack defects was detected using infrared thermal wave imaging technique. The 3-D thermal conduction model in semiconductor silicon wafer excited by linear frequency modulated continuous laser was established, and it was solved by finite element method. The results show the effectiveness of the proposed method for detecting micro-crack defects in semiconductor silicon wafers.http://www.doiserbia.nb.rs/img/doi/0354-9836/2020/0354-98362006011T.pdfinfrared thermal wave imaging techniquemicro-cracksemiconductor silicon waferinfrared thermal imaginglinear frequencyfinite element method
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Tang Qing-Ju Gao Shuai-Shuai Liu Yong-Jie Wang Yun-Ze Dai Jing-Min
spellingShingle	Tang Qing-Ju Gao Shuai-Shuai Liu Yong-Jie Wang Yun-Ze Dai Jing-Min Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects Thermal Science infrared thermal wave imaging technique micro-crack semiconductor silicon wafer infrared thermal imaging linear frequency finite element method
author_facet	Tang Qing-Ju Gao Shuai-Shuai Liu Yong-Jie Wang Yun-Ze Dai Jing-Min
author_sort	Tang Qing-Ju
title	Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects
title_short	Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects
title_full	Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects
title_fullStr	Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects
title_full_unstemmed	Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects
title_sort	theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects
publisher	VINCA Institute of Nuclear Sciences
series	Thermal Science
issn	0354-9836 2334-7163
publishDate	2020-01-01
description	The semiconductor silicon wafer with micro-crack defects was detected using infrared thermal wave imaging technique. The 3-D thermal conduction model in semiconductor silicon wafer excited by linear frequency modulated continuous laser was established, and it was solved by finite element method. The results show the effectiveness of the proposed method for detecting micro-crack defects in semiconductor silicon wafers.
topic	infrared thermal wave imaging technique micro-crack semiconductor silicon wafer infrared thermal imaging linear frequency finite element method
url	http://www.doiserbia.nb.rs/img/doi/0354-9836/2020/0354-98362006011T.pdf
work_keys_str_mv	AT tangqingju theoreticalstudyoninfraredthermalwaveimagingdetectionofsemiconductorsiliconwaferswithmicrocrackdefects AT gaoshuaishuai theoreticalstudyoninfraredthermalwaveimagingdetectionofsemiconductorsiliconwaferswithmicrocrackdefects AT liuyongjie theoreticalstudyoninfraredthermalwaveimagingdetectionofsemiconductorsiliconwaferswithmicrocrackdefects AT wangyunze theoreticalstudyoninfraredthermalwaveimagingdetectionofsemiconductorsiliconwaferswithmicrocrackdefects AT daijingmin theoreticalstudyoninfraredthermalwaveimagingdetectionofsemiconductorsiliconwaferswithmicrocrackdefects
_version_	1724283812134780928

Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects

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