Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers
It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the res...
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doaj-1a1ad5d8f4804b40a2583d66da681d392020-11-24T22:40:08ZengAIP Publishing LLCAIP Advances2158-32262015-09-0159097132097132-1010.1063/1.4930978032509ADVModelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layersVishnu Gopal0Nutan Gautam1Elena Plis2Sanjay Krishna3Institute of Defence Scientists and Technologists, CFEES complex, Brig. S. K. Majumdar Marg, Delhi – 110054, IndiaDepartment of Electrical and Computer Engineering, Centre for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, U.S.A.Department of Electrical and Computer Engineering, Centre for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, U.S.A.Department of Electrical and Computer Engineering, Centre for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, U.S.A.It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014)] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r), and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r), photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V), where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.http://dx.doi.org/10.1063/1.4930978 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Vishnu Gopal Nutan Gautam Elena Plis Sanjay Krishna |
spellingShingle |
Vishnu Gopal Nutan Gautam Elena Plis Sanjay Krishna Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers AIP Advances |
author_facet |
Vishnu Gopal Nutan Gautam Elena Plis Sanjay Krishna |
author_sort |
Vishnu Gopal |
title |
Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers |
title_short |
Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers |
title_full |
Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers |
title_fullStr |
Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers |
title_full_unstemmed |
Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers |
title_sort |
modelling of current-voltage characteristics of infrared photo-detectors based on type – ii inas/gasb super-lattice diodes with unipolar blocking layers |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2015-09-01 |
description |
It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014)] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r), and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r), photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V), where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode. |
url |
http://dx.doi.org/10.1063/1.4930978 |
work_keys_str_mv |
AT vishnugopal modellingofcurrentvoltagecharacteristicsofinfraredphotodetectorsbasedontypeiiinasgasbsuperlatticediodeswithunipolarblockinglayers AT nutangautam modellingofcurrentvoltagecharacteristicsofinfraredphotodetectorsbasedontypeiiinasgasbsuperlatticediodeswithunipolarblockinglayers AT elenaplis modellingofcurrentvoltagecharacteristicsofinfraredphotodetectorsbasedontypeiiinasgasbsuperlatticediodeswithunipolarblockinglayers AT sanjaykrishna modellingofcurrentvoltagecharacteristicsofinfraredphotodetectorsbasedontypeiiinasgasbsuperlatticediodeswithunipolarblockinglayers |
_version_ |
1725705715257966592 |