Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers
It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the res...
Main Authors: | Vishnu Gopal, Nutan Gautam, Elena Plis, Sanjay Krishna |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2015-09-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4930978 |
Similar Items
-
Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture
by: E. A. Plis, et al.
Published: (2011-01-01) -
The Application of Type-II InAs/GaSb Superlattice Infrared Photo-Diodes in Thermal Image
by: Shih, Tung-Chuan, et al.
Published: (2015) -
Investigation of InAs/AlSb/GaSb-Based Structures and GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structures
by: Liu, Meng-Hwang, et al.
Published: (1997) -
Microstructure and conductance-slope of InAs/GaSb tunnel diodes
by: Fitzgerald, Eugene A., et al.
Published: (2014) -
The Study of InAs/GaSb Strained Layer Superlattics Infrared Detectors
by: Jia-Rong Chang, et al.
Published: (1996)