Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing

• Main Authors: Salvatore A. Pullano, Nishat T. Tasneem, Ifana Mahbub, Samira Shamsir, Marta Greco, Syed K. Islam, Antonino S. Fiorillo
• Format: Article
• Language: English
• Published: MDPI AG 2019-03-01
• Series: Sensors
• Subjects: EGFET; electronic interface; biosensors; low noise design; MOSFET; compact modeling; pH sensor
• Online Access: http://www.mdpi.com/1424-8220/19/5/1063

Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic interfaces are still scarce (e.g., noise processes, scaling). Therefore, the incorporation of a custom EGFET can lead to biosensors with optimized performance. In this paper, the design and characterization of a transistor association (TA)-based EGFET was investigated. Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature. A DC equivalence with the counterpart involving a single equivalent transistor was observed. Experimental results showed a power consumption of 24.99 mW at 1.2 V supply voltage with a minimum die area of 0.685 × 1.2 mm2. The higher aspect ratio devices required a proportionally increased die area and power consumption. Conversely, the input-referred noise showed an opposite trend with a minimum of 176.4 nVrms over the 0.1 to 10 Hz frequency band for a higher aspect ratio. EGFET as a pH sensor presented further validation of the design with an average voltage sensitivity of 50.3 mV/pH, a maximum current sensitivity of 15.71 mA1/2/pH, a linearity higher than 99.9%, and the possibility of operating at a lower noise level with a compact design and a low complexity.