Determination of the Degree of Homogeneity for n-Ge Crystals by Measurements of Magnetoresistance in Classically Weak Magnetic Fields

In a wide range of values of the resistivity 0.0212 £ r £ 35 Ohm×cm for n-Ge crystals with known crystallographic orientation the ratio M100 2 100 1 M100 2 1 M110 110 M110 º = º , which was predicted by the theory, was experimentally confirmed. The experimentally measured deviations from the relatio...

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Bibliographic Details
Main Authors: G. P. Gaidar, P. I. Baranskii
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2016-10-01
Series:Фізика і хімія твердого тіла
Online Access:http://journals.pu.if.ua/index.php/pcss/article/view/778
Description
Summary:In a wide range of values of the resistivity 0.0212 £ r £ 35 Ohm×cm for n-Ge crystals with known crystallographic orientation the ratio M100 2 100 1 M100 2 1 M110 110 M110 º = º , which was predicted by the theory, was experimentally confirmed. The experimentally measured deviations from the relationship M100 2 1 M110 = , which are associated with the heterogeneity of the crystals, it is proposed to use for qualitative assessment of the degree of heterogeneity in the spatial distribution of dopants in the samples. <br /><strong>Keywords:</strong> germanium, degree of homogeneity, resistivity, magnetic field, magnetoresistance.
ISSN:1729-4428
2309-8589