Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT
In this study, we improved the photosensitivity of the lead sulfide quantum dot (PbS QD)-based shortwave infrared (SWIR: 1.0–2.5 μm) photodetector by blending poly(3-hexylthiophene-2,5-diyl) (P3HT) with PbS QD. The PbS QD used for SWIR photoactive layer showed an absorption peak at 1410 nm. In addit...
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doaj-1bf305dfca3b4faaae0799af175f08942021-03-19T00:03:18ZengMDPI AGMaterials1996-19442021-03-01141488148810.3390/ma14061488Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HTKyeong-Ho Seo0Jaewon Jang1In Man Kang2Jin-Hyuk Bae3School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaIn this study, we improved the photosensitivity of the lead sulfide quantum dot (PbS QD)-based shortwave infrared (SWIR: 1.0–2.5 μm) photodetector by blending poly(3-hexylthiophene-2,5-diyl) (P3HT) with PbS QD. The PbS QD used for SWIR photoactive layer showed an absorption peak at 1410 nm. In addition, by using zinc oxide nanoparticles (ZnO NPs) as an interlayer, we obtained the stable current characteristics of our device. To confirm the effectiveness of P3HT on the PbS QD-based SWIR photodetector, we compared the electrical characteristics of a PbS QD-based device with a hybrid P3HT:PbS QD-based device. In the reverse bias region, the current on/off ratio of the PbS QD-based device was 1.3, whereas the on/off ratio of the hybrid P3HT:PbS QD-based device was 2.9; 2.2 times higher than the PbS QD-based device. At −1 V, the on/off ratio of the PbS QD-based device was 1.3 and the on/off ratio of the hybrid P3HT:PbS QD-based device was 3.4; 2.6 times higher than the PbS QD-based device. The fabricated P3HT:PbS QD-based device had the highest on/off ratio when −1 V voltage was applied.https://www.mdpi.com/1996-1944/14/6/1488photosensitivitypoly(3-hexylthiophene-2,5-diyl)lead sulfide quantum dotsshortwave infrared photodetectorcurrent on/off ratio |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Kyeong-Ho Seo Jaewon Jang In Man Kang Jin-Hyuk Bae |
spellingShingle |
Kyeong-Ho Seo Jaewon Jang In Man Kang Jin-Hyuk Bae Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT Materials photosensitivity poly(3-hexylthiophene-2,5-diyl) lead sulfide quantum dots shortwave infrared photodetector current on/off ratio |
author_facet |
Kyeong-Ho Seo Jaewon Jang In Man Kang Jin-Hyuk Bae |
author_sort |
Kyeong-Ho Seo |
title |
Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT |
title_short |
Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT |
title_full |
Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT |
title_fullStr |
Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT |
title_full_unstemmed |
Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT |
title_sort |
improving of sensitivity of pbs quantum dot based swir photodetector using p3ht |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2021-03-01 |
description |
In this study, we improved the photosensitivity of the lead sulfide quantum dot (PbS QD)-based shortwave infrared (SWIR: 1.0–2.5 μm) photodetector by blending poly(3-hexylthiophene-2,5-diyl) (P3HT) with PbS QD. The PbS QD used for SWIR photoactive layer showed an absorption peak at 1410 nm. In addition, by using zinc oxide nanoparticles (ZnO NPs) as an interlayer, we obtained the stable current characteristics of our device. To confirm the effectiveness of P3HT on the PbS QD-based SWIR photodetector, we compared the electrical characteristics of a PbS QD-based device with a hybrid P3HT:PbS QD-based device. In the reverse bias region, the current on/off ratio of the PbS QD-based device was 1.3, whereas the on/off ratio of the hybrid P3HT:PbS QD-based device was 2.9; 2.2 times higher than the PbS QD-based device. At −1 V, the on/off ratio of the PbS QD-based device was 1.3 and the on/off ratio of the hybrid P3HT:PbS QD-based device was 3.4; 2.6 times higher than the PbS QD-based device. The fabricated P3HT:PbS QD-based device had the highest on/off ratio when −1 V voltage was applied. |
topic |
photosensitivity poly(3-hexylthiophene-2,5-diyl) lead sulfide quantum dots shortwave infrared photodetector current on/off ratio |
url |
https://www.mdpi.com/1996-1944/14/6/1488 |
work_keys_str_mv |
AT kyeonghoseo improvingofsensitivityofpbsquantumdotbasedswirphotodetectorusingp3ht AT jaewonjang improvingofsensitivityofpbsquantumdotbasedswirphotodetectorusingp3ht AT inmankang improvingofsensitivityofpbsquantumdotbasedswirphotodetectorusingp3ht AT jinhyukbae improvingofsensitivityofpbsquantumdotbasedswirphotodetectorusingp3ht |
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