Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a...

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Bibliographic Details
Main Authors: Sergey V. Sorokin, Pavel S. Avdienko, Irina V. Sedova, Demid A. Kirilenko, Valery Yu. Davydov, Oleg S. Komkov, Dmitrii D. Firsov, Sergey V. Ivanov
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Materials
Subjects:
III–metal chalcogenides
2D materials
GaSe
InSe
GaTe
quantum wells
Online Access:https://www.mdpi.com/1996-1944/13/16/3447

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https://www.mdpi.com/1996-1944/13/16/3447

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