Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs) system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us...

Full description

Bibliographic Details
Main Authors: Adenilson José Chiquito, Yuri Alexander Pusep, Sérgio Mergulhão, Yara Galvão Gobato, José Cláudio Galzerani, Nicolai Moshegov
Format: Article
Language:English
Published: Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) 2004-09-01
Series:Materials Research
Subjects:
InAs/GaAs quantum dots
capacitance
raman scattering
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000300014

Similar Items

Similar Items