Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs) system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us...
Main Authors: | Adenilson José Chiquito, Yuri Alexander Pusep, Sérgio Mergulhão, Yara Galvão Gobato, José Cláudio Galzerani, Nicolai Moshegov |
---|---|
Format: | Article |
Language: | English |
Published: |
Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2004-09-01
|
Series: | Materials Research |
Subjects: | |
Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000300014 |
Similar Items
-
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
by: Strom NW, et al.
Published: (2007-01-01) -
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
by: Kim Y, et al.
Published: (2009-01-01) -
Propriedades eletrônicas de pontos quânticos de InAs1-xPx sobre GaAs.
by: Carlos César Bof\' Bufon
Published: (2003) -
Propriedades eletrônicas de pontos quânticos de InAs1-xPx sobre GaAs.
by: Bufon, Carlos César Bof\'
Published: (2003) -
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
by: Sergii Golovynskyi, et al.
Published: (2017-05-01)