A New Linearization Technique Using Multi-sinh Doublet

• Main Authors: CEHAN, V., BOZOMITU, R. G., POPA, V.
• Format: Article
• Language: English
• Published: Stefan cel Mare University of Suceava 2009-06-01
• Series: Advances in Electrical and Computer Engineering
• Subjects: CCII; doublet; linearization; multi-tanh; multi-sinh; transconductor
• Online Access: http://dx.doi.org/10.4316/AECE.2009.02008

In this paper a new linearization technique using multi-sinh doublet, implemented with a second generation current conveyor is presented. This new linearization technique is compared with the one based on multi-tanh doublets with linearization series connected diodes on the branches. The comparative study of the two linearization techniques is carried out using both dynamic range analysis, expressed by linearity error and the THD value calculation of output current, and the noise behavior of the two analyzed doublets. For the multi-sinh linearization technique proposed in the paper a method which assures the increase of the dynamic range, keeping the transconductance value constant is presented. This is done by using two design parameters: the number of series connected diodes N, which specifies the desired linear operating range and the k emitters areas ratio of the input stage transistors, which establishes the transconductance value. In the paper is also shown that if the transconductances of the two analyzed doublets are identical, and for the same values of N and k parameters, respectively, the current consumption of the multi-sinh doublet is always smaller than for the multi-tanh doublet.