FEMTOSECOND LASER SCRIBING OF SAPPHIRE AT WAVELENGTH 1040 AND 520 NM

Sapphire cutting is one of the largest markets in laser materials processing. Since sapphire is one of the hardest transparent materials its mechanical and optical properties made it the ideal choice for use in the production of various devices, such as LEDs and transistors, cover glasses of watches...

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Main Authors: B. A. Shulenkova, E. V. Lutsenko, A. V. Danilchik, Ja. A. Solovjov, A. N. Pyatlitski, M. V. Kirasirava
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-12-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
Online Access:https://doklady.bsuir.by/jour/article/view/2228
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spelling doaj-1f204a7117014b16ad85af13993583702021-07-28T16:19:57ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-12-0107 (125)15215610.35596/1729-7648-2019-125-7-152-1561418FEMTOSECOND LASER SCRIBING OF SAPPHIRE AT WAVELENGTH 1040 AND 520 NMB. A. Shulenkova0E. V. Lutsenko1A. V. Danilchik2Ja. A. Solovjov3A. N. Pyatlitski4M. V. Kirasirava5B.I. Stepanov Institute of Physics of NAS of BelarusB.I. Stepanov Institute of Physics of NAS of BelarusB.I. Stepanov Institute of Physics of NAS of Belarus«Integral» holding managing company«Integral» holding managing company«Integral» holding managing companySapphire cutting is one of the largest markets in laser materials processing. Since sapphire is one of the hardest transparent materials its mechanical and optical properties made it the ideal choice for use in the production of various devices, such as LEDs and transistors, cover glasses of watches and mobile devices. Among existing laser- or diamond-based tools solutions, femtosecond laser scribing appear as a promising technology since this technology has the unique capacity to produce highly localized bulk modification owing to non-linear absorption. Sapphire cutting with solid-state lasers is well known for many years and has become a modern industrial process. However, achievable process speed and cut quality are still limited. The femtosecond laser scribing of sapphire was studied at wavelengths of 1040 and 520 nm, followed by wet etching in HNO3/HF solution to identify emerging defects. The morphology of the laser ablated sapphire surface was evaluated by scanning electron microscopy. It was shown that at the wavelength of 1040nm, the material was effectively removed from the surface; however, cracks on the surface were formed. The use of the second harmonic gave more accurate and deep cuts compared with the main frequency at the same conditions. At the wavelength of 520 nm, the cracks were formed anisotropically inside the volume of the material. Therefore, there is a potential application of the femtosecond laser scribing for the fabrication of sapphire-based devices.https://doklady.bsuir.by/jour/article/view/2228femtosecond laserablation of sapphirewet etchingscribing
collection DOAJ
language Russian
format Article
sources DOAJ
author B. A. Shulenkova
E. V. Lutsenko
A. V. Danilchik
Ja. A. Solovjov
A. N. Pyatlitski
M. V. Kirasirava
spellingShingle B. A. Shulenkova
E. V. Lutsenko
A. V. Danilchik
Ja. A. Solovjov
A. N. Pyatlitski
M. V. Kirasirava
FEMTOSECOND LASER SCRIBING OF SAPPHIRE AT WAVELENGTH 1040 AND 520 NM
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
femtosecond laser
ablation of sapphire
wet etching
scribing
author_facet B. A. Shulenkova
E. V. Lutsenko
A. V. Danilchik
Ja. A. Solovjov
A. N. Pyatlitski
M. V. Kirasirava
author_sort B. A. Shulenkova
title FEMTOSECOND LASER SCRIBING OF SAPPHIRE AT WAVELENGTH 1040 AND 520 NM
title_short FEMTOSECOND LASER SCRIBING OF SAPPHIRE AT WAVELENGTH 1040 AND 520 NM
title_full FEMTOSECOND LASER SCRIBING OF SAPPHIRE AT WAVELENGTH 1040 AND 520 NM
title_fullStr FEMTOSECOND LASER SCRIBING OF SAPPHIRE AT WAVELENGTH 1040 AND 520 NM
title_full_unstemmed FEMTOSECOND LASER SCRIBING OF SAPPHIRE AT WAVELENGTH 1040 AND 520 NM
title_sort femtosecond laser scribing of sapphire at wavelength 1040 and 520 nm
publisher Educational institution «Belarusian State University of Informatics and Radioelectronics»
series Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
issn 1729-7648
publishDate 2019-12-01
description Sapphire cutting is one of the largest markets in laser materials processing. Since sapphire is one of the hardest transparent materials its mechanical and optical properties made it the ideal choice for use in the production of various devices, such as LEDs and transistors, cover glasses of watches and mobile devices. Among existing laser- or diamond-based tools solutions, femtosecond laser scribing appear as a promising technology since this technology has the unique capacity to produce highly localized bulk modification owing to non-linear absorption. Sapphire cutting with solid-state lasers is well known for many years and has become a modern industrial process. However, achievable process speed and cut quality are still limited. The femtosecond laser scribing of sapphire was studied at wavelengths of 1040 and 520 nm, followed by wet etching in HNO3/HF solution to identify emerging defects. The morphology of the laser ablated sapphire surface was evaluated by scanning electron microscopy. It was shown that at the wavelength of 1040nm, the material was effectively removed from the surface; however, cracks on the surface were formed. The use of the second harmonic gave more accurate and deep cuts compared with the main frequency at the same conditions. At the wavelength of 520 nm, the cracks were formed anisotropically inside the volume of the material. Therefore, there is a potential application of the femtosecond laser scribing for the fabrication of sapphire-based devices.
topic femtosecond laser
ablation of sapphire
wet etching
scribing
url https://doklady.bsuir.by/jour/article/view/2228
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AT avdanilchik femtosecondlaserscribingofsapphireatwavelength1040and520nm
AT jaasolovjov femtosecondlaserscribingofsapphireatwavelength1040and520nm
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