Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films
Tin oxide (SnO2—x) thin films were prepared under various flow ratios of O2/(O2 + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar), chamber pressures and post-annealing treatment on the physical...
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doaj-1fecfa809bd24bf0a1f775f103ab22632020-11-25T01:03:08ZengMDPI AGMaterials1996-19442015-08-01885289529710.3390/ma8085243ma8085243Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin FilmsChun-Min Wang0Chun-Chieh Huang1Jui-Chao Kuo2Dipti Ranjan Sahu3Jow-Lay Huang4Department of Materials Science and Engineering, National Cheng Kung University, No. 1, University Road, Tainan 701, TaiwanDepartment of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, TaiwanDepartment of Materials Science and Engineering, National Cheng Kung University, No. 1, University Road, Tainan 701, TaiwanAmity Institute of Nanotechnology, Amity University, Sector 125, Noida, IndiaDepartment of Materials Science and Engineering, National Cheng Kung University, No. 1, University Road, Tainan 701, TaiwanTin oxide (SnO2—x) thin films were prepared under various flow ratios of O2/(O2 + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.http://www.mdpi.com/1996-1944/8/8/5243SnO2transparent conductive oxide (TCO)oxygen flow ratioannealing |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Chun-Min Wang Chun-Chieh Huang Jui-Chao Kuo Dipti Ranjan Sahu Jow-Lay Huang |
spellingShingle |
Chun-Min Wang Chun-Chieh Huang Jui-Chao Kuo Dipti Ranjan Sahu Jow-Lay Huang Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films Materials SnO2 transparent conductive oxide (TCO) oxygen flow ratio annealing |
author_facet |
Chun-Min Wang Chun-Chieh Huang Jui-Chao Kuo Dipti Ranjan Sahu Jow-Lay Huang |
author_sort |
Chun-Min Wang |
title |
Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films |
title_short |
Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films |
title_full |
Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films |
title_fullStr |
Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films |
title_full_unstemmed |
Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films |
title_sort |
effect of annealing temperature and oxygen flow in the properties of ion beam sputtered sno—2x thin films |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2015-08-01 |
description |
Tin oxide (SnO2—x) thin films were prepared under various flow ratios of O2/(O2 + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor. |
topic |
SnO2 transparent conductive oxide (TCO) oxygen flow ratio annealing |
url |
http://www.mdpi.com/1996-1944/8/8/5243 |
work_keys_str_mv |
AT chunminwang effectofannealingtemperatureandoxygenflowinthepropertiesofionbeamsputteredsno2xthinfilms AT chunchiehhuang effectofannealingtemperatureandoxygenflowinthepropertiesofionbeamsputteredsno2xthinfilms AT juichaokuo effectofannealingtemperatureandoxygenflowinthepropertiesofionbeamsputteredsno2xthinfilms AT diptiranjansahu effectofannealingtemperatureandoxygenflowinthepropertiesofionbeamsputteredsno2xthinfilms AT jowlayhuang effectofannealingtemperatureandoxygenflowinthepropertiesofionbeamsputteredsno2xthinfilms |
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