Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump
This paper presents a symbolic description of the design process of the switch transistors for the cross- coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator software which can be an extremely time-consuming p...
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Spolecnost pro radioelektronicke inzenyrstvi
2017-09-01
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Online Access: | https://www.radioeng.cz/fulltexts/2017/17_03_0781_0790.pdf |
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doaj-2044b8e852b744a589deb719748dc09b2020-11-25T00:19:01ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122017-09-01263781790Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge PumpJ. MarekJ. HospodkaO. SubrtThis paper presents a symbolic description of the design process of the switch transistors for the cross- coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator software which can be an extremely time-consuming process in contrast to described analytical procedure. The significant part of the pumping losses is caused by the reverse current through the switch transistors due to continuous-time voltage change on the main capacitors. Design process is based on the analytical expression of the time response characteristics of the pump stage as an analog system with using BSIM model equations. The main benefit of the article is the analytical transistors sizing formula, so that the maximum voltage gain is achieved. The diode transistor is dimensioned for the pump requirements, as the maximal pump output ripple voltage, current, etc. The characteristics of the proposed circuit has been verified by simulation in ELDO Spice. Results are valid for N-stage charge pump and also applicable for other model equations as PSP, EKV.https://www.radioeng.cz/fulltexts/2017/17_03_0781_0790.pdfTime response characteristicsreverse currentcross-coupled charge pumpBSIM modelhigh-voltage |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
J. Marek J. Hospodka O. Subrt |
spellingShingle |
J. Marek J. Hospodka O. Subrt Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump Radioengineering Time response characteristics reverse current cross-coupled charge pump BSIM model high-voltage |
author_facet |
J. Marek J. Hospodka O. Subrt |
author_sort |
J. Marek |
title |
Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump |
title_short |
Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump |
title_full |
Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump |
title_fullStr |
Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump |
title_full_unstemmed |
Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump |
title_sort |
guidelines on the switch transistors sizing using the symbolic description for the cross-coupled charge pump |
publisher |
Spolecnost pro radioelektronicke inzenyrstvi |
series |
Radioengineering |
issn |
1210-2512 |
publishDate |
2017-09-01 |
description |
This paper presents a symbolic description of the design process of the switch transistors for the cross- coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator software which can be an extremely time-consuming process in contrast to described analytical procedure. The significant part of the pumping losses is caused by the reverse current through the switch transistors due to continuous-time voltage change on the main capacitors. Design process is based on the analytical expression of the time response characteristics of the pump stage as an analog system with using BSIM model equations. The main benefit of the article is the analytical transistors sizing formula, so that the maximum voltage gain is achieved. The diode transistor is dimensioned for the pump requirements, as the maximal pump output ripple voltage, current, etc. The characteristics of the proposed circuit has been verified by simulation in ELDO Spice. Results are valid for N-stage charge pump and also applicable for other model equations as PSP, EKV. |
topic |
Time response characteristics reverse current cross-coupled charge pump BSIM model high-voltage |
url |
https://www.radioeng.cz/fulltexts/2017/17_03_0781_0790.pdf |
work_keys_str_mv |
AT jmarek guidelinesontheswitchtransistorssizingusingthesymbolicdescriptionforthecrosscoupledchargepump AT jhospodka guidelinesontheswitchtransistorssizingusingthesymbolicdescriptionforthecrosscoupledchargepump AT osubrt guidelinesontheswitchtransistorssizingusingthesymbolicdescriptionforthecrosscoupledchargepump |
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