Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump

• Main Authors: J. Marek, J. Hospodka, O. Subrt
• Format: Article
• Language: English
• Published: Spolecnost pro radioelektronicke inzenyrstvi 2017-09-01
• Series: Radioengineering
• Subjects: Time response characteristics; reverse current; cross-coupled charge pump; BSIM model; high-voltage
• Online Access: https://www.radioeng.cz/fulltexts/2017/17_03_0781_0790.pdf

This paper presents a symbolic description of the design process of the switch transistors for the cross- coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator software which can be an extremely time-consuming process in contrast to described analytical procedure. The significant part of the pumping losses is caused by the reverse current through the switch transistors due to continuous-time voltage change on the main capacitors. Design process is based on the analytical expression of the time response characteristics of the pump stage as an analog system with using BSIM model equations. The main benefit of the article is the analytical transistors sizing formula, so that the maximum voltage gain is achieved. The diode transistor is dimensioned for the pump requirements, as the maximal pump output ripple voltage, current, etc. The characteristics of the proposed circuit has been verified by simulation in ELDO Spice. Results are valid for N-stage charge pump and also applicable for other model equations as PSP, EKV.