The effect of Cu-doping on CdS thin films deposited by the spray pyrolysis technique

Pure CdS and Cu-doped CdS thin films were deposited using the spray pyrolysis technique and characterized using XRD, XPS, AFM, UV-VIS spectroscopy and two probe DC-conductivity measurements. 2%, 4% and 6% Cu-content was used for doping. The particle size was found to decrease from 28 nm to 25.4 nm u...

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Main Authors: Ahmed A. Aboud, Ayan Mukherjee, Neerish Revaprasadu, Ahmed Nagaty Mohamed
Format: Article
Language:English
Published: Elsevier 2019-04-01
Series:Journal of Materials Research and Technology
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785418302072
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spelling doaj-208e8aff312b41508a247419711d283d2020-11-25T03:18:53ZengElsevierJournal of Materials Research and Technology2238-78542019-04-018220212030The effect of Cu-doping on CdS thin films deposited by the spray pyrolysis techniqueAhmed A. Aboud0Ayan Mukherjee1Neerish Revaprasadu2Ahmed Nagaty Mohamed3Department of Physics, Faculty of Science, Beni-Suif University, Beni-Suef, Egypt; Corresponding author.Department of Physics, RRS COLLEGE, PATLIPUTRA UNIVERSITY, PATNA, INDIADepartment of Chemistry, University of Zululand, KwaDlangezwa, South AfricaDepartment of Physics, Faculty of Science, Beni-Suif University, Beni-Suef, EgyptPure CdS and Cu-doped CdS thin films were deposited using the spray pyrolysis technique and characterized using XRD, XPS, AFM, UV-VIS spectroscopy and two probe DC-conductivity measurements. 2%, 4% and 6% Cu-content was used for doping. The particle size was found to decrease from 28 nm to 25.4 nm upon Cu-doping. The influence of Cu-doping on the stress and dislocation per unit volume has been estimated from the XRD data. AFM images of the annealed films show changes in morphology with increase in surface roughness from 25 nm to 31 nm with Cu-6% doping. Reflectance and transmission measurements were studied in the spectral range of 200–1100 nm to extract the optical properties variation upon copper doping. Also the band gap was found to decrease from 2.43 to 2.39 eV with increase in copper content. The electrical conductivity was measured by direct record of the resistance against temperature. All films show a semiconducting behavior and incorporation of Cu on CdS increases its activation energy. Keywords: CdS thin films, Microstructure, XPS, Surface morphology, Band gap, Cu doping, Taxonomy chemical composition analysis, Microstructure characterizationhttp://www.sciencedirect.com/science/article/pii/S2238785418302072
collection DOAJ
language English
format Article
sources DOAJ
author Ahmed A. Aboud
Ayan Mukherjee
Neerish Revaprasadu
Ahmed Nagaty Mohamed
spellingShingle Ahmed A. Aboud
Ayan Mukherjee
Neerish Revaprasadu
Ahmed Nagaty Mohamed
The effect of Cu-doping on CdS thin films deposited by the spray pyrolysis technique
Journal of Materials Research and Technology
author_facet Ahmed A. Aboud
Ayan Mukherjee
Neerish Revaprasadu
Ahmed Nagaty Mohamed
author_sort Ahmed A. Aboud
title The effect of Cu-doping on CdS thin films deposited by the spray pyrolysis technique
title_short The effect of Cu-doping on CdS thin films deposited by the spray pyrolysis technique
title_full The effect of Cu-doping on CdS thin films deposited by the spray pyrolysis technique
title_fullStr The effect of Cu-doping on CdS thin films deposited by the spray pyrolysis technique
title_full_unstemmed The effect of Cu-doping on CdS thin films deposited by the spray pyrolysis technique
title_sort effect of cu-doping on cds thin films deposited by the spray pyrolysis technique
publisher Elsevier
series Journal of Materials Research and Technology
issn 2238-7854
publishDate 2019-04-01
description Pure CdS and Cu-doped CdS thin films were deposited using the spray pyrolysis technique and characterized using XRD, XPS, AFM, UV-VIS spectroscopy and two probe DC-conductivity measurements. 2%, 4% and 6% Cu-content was used for doping. The particle size was found to decrease from 28 nm to 25.4 nm upon Cu-doping. The influence of Cu-doping on the stress and dislocation per unit volume has been estimated from the XRD data. AFM images of the annealed films show changes in morphology with increase in surface roughness from 25 nm to 31 nm with Cu-6% doping. Reflectance and transmission measurements were studied in the spectral range of 200–1100 nm to extract the optical properties variation upon copper doping. Also the band gap was found to decrease from 2.43 to 2.39 eV with increase in copper content. The electrical conductivity was measured by direct record of the resistance against temperature. All films show a semiconducting behavior and incorporation of Cu on CdS increases its activation energy. Keywords: CdS thin films, Microstructure, XPS, Surface morphology, Band gap, Cu doping, Taxonomy chemical composition analysis, Microstructure characterization
url http://www.sciencedirect.com/science/article/pii/S2238785418302072
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