Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation

Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation

The effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion mass spectrometry , and chemic...

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Main Authors: Xi Zhang, Hideki Takeuchi, Daniel Connelly, Marek Hytha, Robert J. Mears, Leonard M. Rubin, Tsu-Jae King Liu
Format: Article
Language:English
Published: AIP Publishing LLC 2020-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5144507
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spelling doaj-209540c359824d6a876bb60c9e42268d2020-11-25T02:32:39ZengAIP Publishing LLCAIP Advances2158-32262020-06-01106065310065310-810.1063/1.5144507Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantationXi Zhang0Hideki Takeuchi1Daniel Connelly2Marek Hytha3Robert J. Mears4Leonard M. Rubin5Tsu-Jae King Liu6Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAAtomera, Inc., Los Gatos, California 95035, USAAtomera, Inc., Los Gatos, California 95035, USAAtomera, Inc., Los Gatos, California 95035, USAAtomera, Inc., Los Gatos, California 95035, USAAxcelis Technologies, Inc., Beverly, Massachusetts 01915, USADepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAThe effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion mass spectrometry , and chemical analyses by x-ray photoelectron spectroscopy. It is found that both oxygen-inserted (OI) layers and F can reduce ΦBp due to Ti 2p and Si 2p binding energy shifts before forming gas anneal (FGA) and due to retarded Pt diffusion into Si (facilitating low-ΦBp Pt mono-silicide formation) during FGA. The experimental findings also suggest that OI layers are more effective than F for reducing ΦBp.http://dx.doi.org/10.1063/1.5144507
collection DOAJ
language English
format Article
sources DOAJ
author Xi Zhang
Hideki Takeuchi
Daniel Connelly
Marek Hytha
Robert J. Mears
Leonard M. Rubin
Tsu-Jae King Liu
spellingShingle Xi Zhang
Hideki Takeuchi
Daniel Connelly
Marek Hytha
Robert J. Mears
Leonard M. Rubin
Tsu-Jae King Liu
Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
AIP Advances
author_facet Xi Zhang
Hideki Takeuchi
Daniel Connelly
Marek Hytha
Robert J. Mears
Leonard M. Rubin
Tsu-Jae King Liu
author_sort Xi Zhang
title Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
title_short Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
title_full Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
title_fullStr Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
title_full_unstemmed Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
title_sort tuning of schottky barrier height using oxygen-inserted (oi) layers and fluorine implantation
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2020-06-01
description The effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion mass spectrometry , and chemical analyses by x-ray photoelectron spectroscopy. It is found that both oxygen-inserted (OI) layers and F can reduce ΦBp due to Ti 2p and Si 2p binding energy shifts before forming gas anneal (FGA) and due to retarded Pt diffusion into Si (facilitating low-ΦBp Pt mono-silicide formation) during FGA. The experimental findings also suggest that OI layers are more effective than F for reducing ΦBp.
url http://dx.doi.org/10.1063/1.5144507
work_keys_str_mv AT xizhang tuningofschottkybarrierheightusingoxygeninsertedoilayersandfluorineimplantation
AT hidekitakeuchi tuningofschottkybarrierheightusingoxygeninsertedoilayersandfluorineimplantation
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AT marekhytha tuningofschottkybarrierheightusingoxygeninsertedoilayersandfluorineimplantation
AT robertjmears tuningofschottkybarrierheightusingoxygeninsertedoilayersandfluorineimplantation
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