Considerable Enhancement of Field Emission of SnO₂Nanowires by Post-Annealing Process in Oxygen at High Temperature

• Main Authors: Fang XS, Tang CC, Bando Y, Wang JB, Li K, Zhong XL, Zhou YC
• Format: Article
• Language: English
• Published: SpringerOpen 2009-01-01
• Series: Nanoscale Research Letters
• Subjects: SnO₂nanowires; Chemical vapor deposition; Field emission; Annealing
• Online Access: http://dx.doi.org/10.1007/s11671-009-9367-x
• ISSN: 1931-7573; 1556-276X

<p>Abstract</p> <p>The field emission properties of SnO₂nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO₂nanowires, the turn-on and threshold field were 4.03 and 5.4 V/&#956;m, respectively. Considerable enhancement of field emission of SnO₂nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO₂nanowires were post-annealed at 1,000 &#176;C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/&#956;m, respectively, and the current density was increased to 6.58 from 0.3 mA/cm²at the same applied electric field of 5.0 V/&#956;m.</p>