Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High Temperature

Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High Temperature

<p>Abstract</p> <p>The field emission properties of SnO<sub>2</sub>nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO<sub>2</sub>nanowires, the turn-on and threshold field were 4.0...

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Main Authors: Fang XS, Tang CC, Bando Y, Wang JB, Li K, Zhong XL, Zhou YC
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
SnO<sub>2</sub>nanowires
Chemical vapor deposition
Field emission
Annealing
Online Access:http://dx.doi.org/10.1007/s11671-009-9367-x
id doaj-215362e80e034b45ae49c8c53b4e6afe
record_format Article
spelling doaj-215362e80e034b45ae49c8c53b4e6afe2020-11-25T00:57:40ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2009-01-0141011351140Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High TemperatureFang XSTang CCBando YWang JBLi KZhong XLZhou YC<p>Abstract</p> <p>The field emission properties of SnO<sub>2</sub>nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO<sub>2</sub>nanowires, the turn-on and threshold field were 4.03 and 5.4 V/&#956;m, respectively. Considerable enhancement of field emission of SnO<sub>2</sub>nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO<sub>2</sub>nanowires were post-annealed at 1,000 &#176;C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/&#956;m, respectively, and the current density was increased to 6.58 from 0.3 mA/cm<sup>2</sup>at the same applied electric field of 5.0 V/&#956;m.</p> http://dx.doi.org/10.1007/s11671-009-9367-xSnO<sub>2</sub>nanowiresChemical vapor depositionField emissionAnnealing
collection DOAJ
language English
format Article
sources DOAJ
author Fang XS
Tang CC
Bando Y
Wang JB
Li K
Zhong XL
Zhou YC
spellingShingle Fang XS
Tang CC
Bando Y
Wang JB
Li K
Zhong XL
Zhou YC
Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High Temperature
Nanoscale Research Letters
SnO<sub>2</sub>nanowires
Chemical vapor deposition
Field emission
Annealing
author_facet Fang XS
Tang CC
Bando Y
Wang JB
Li K
Zhong XL
Zhou YC
author_sort Fang XS
title Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_short Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_full Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_fullStr Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_full_unstemmed Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_sort considerable enhancement of field emission of sno<sub>2</sub>nanowires by post-annealing process in oxygen at high temperature
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2009-01-01
description <p>Abstract</p> <p>The field emission properties of SnO<sub>2</sub>nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO<sub>2</sub>nanowires, the turn-on and threshold field were 4.03 and 5.4 V/&#956;m, respectively. Considerable enhancement of field emission of SnO<sub>2</sub>nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO<sub>2</sub>nanowires were post-annealed at 1,000 &#176;C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/&#956;m, respectively, and the current density was increased to 6.58 from 0.3 mA/cm<sup>2</sup>at the same applied electric field of 5.0 V/&#956;m.</p>
topic SnO<sub>2</sub>nanowires
Chemical vapor deposition
Field emission
Annealing
url http://dx.doi.org/10.1007/s11671-009-9367-x
work_keys_str_mv AT fangxs considerableenhancementoffieldemissionofsnosub2subnanowiresbypostannealingprocessinoxygenathightemperature
AT tangcc considerableenhancementoffieldemissionofsnosub2subnanowiresbypostannealingprocessinoxygenathightemperature
AT bandoy considerableenhancementoffieldemissionofsnosub2subnanowiresbypostannealingprocessinoxygenathightemperature
AT wangjb considerableenhancementoffieldemissionofsnosub2subnanowiresbypostannealingprocessinoxygenathightemperature
AT lik considerableenhancementoffieldemissionofsnosub2subnanowiresbypostannealingprocessinoxygenathightemperature
AT zhongxl considerableenhancementoffieldemissionofsnosub2subnanowiresbypostannealingprocessinoxygenathightemperature
AT zhouyc considerableenhancementoffieldemissionofsnosub2subnanowiresbypostannealingprocessinoxygenathightemperature
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