An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications
The direct current (DC) circuit breaker based on semiconductor power devices is one of the critical components in multiterminal flexible high voltage DC transmission technology. A press pack injection enhanced gate transistor (IEGT) can realize a low on-state voltage similar to a gate turn-off (GTO)...
Main Authors: | Xin Liu, Litong Wang, Guishu Liang, Lei Qi |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
|
Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9144233/ |
Similar Items
-
Performance Evaluation and Limitations of Overvoltage Suppression Circuits for Low- and Medium-Voltage DC Solid-State Breakers
by: Andreas Giannakis, et al.
Published: (2021-01-01) -
Design of a Solid-State Circuit Breaker for a DC Grid-Based Vessel Power System
by: Lukas Tapia, et al.
Published: (2019-08-01) -
Series LC DC circuit breaker
by: Dragan Jovcic
Published: (2019-04-01) -
A Hybrid DC Circuit Breaker with Fault-Current-Limiting Capability for VSC-HVDC Transmission System
by: Muhammad Ahmad, et al.
Published: (2019-06-01) -
Study on Fault Current Characteristics and Current Limiting Method of Plug-In Devices in VSC-DC Distribution System
by: Yuqun Gao, et al.
Published: (2019-08-01)