Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors

A 365-nm UV LED was fabricated based on embedded nanoporous AlGaN distributed Bragg reflectors (DBR) by electrochemical etching. The porous DBR had a reflectance of 93.5% at the central wavelength of 365 nm; this is the highest value of porous AlGaN DBRs below 370 nm which has been reported so far....

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Main Authors:	Xingdong Lu, Jing Li, Kang Su, Chang Ge, Zhicong Li, Teng Zhan, Guohong Wang, Jinmin Li
Format:	Article
Language:	English
Published:	MDPI AG 2019-06-01
Series:	Nanomaterials
Subjects:	365 nm UV LED nanoporous AlGaN DBR two-step etching sidewall protection layer DBR-LED electrically pumped
Online Access:	https://www.mdpi.com/2079-4991/9/6/862

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spelling	doaj-235fc441841048b4894736c8a36efe552020-11-25T00:25:58ZengMDPI AGNanomaterials2079-49912019-06-019686210.3390/nano9060862nano9060862Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg ReflectorsXingdong Lu0Jing Li1Kang Su2Chang Ge3Zhicong Li4Teng Zhan5Guohong Wang6Jinmin Li7Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSemiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSemiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSemiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSemiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSemiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSemiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSemiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaA 365-nm UV LED was fabricated based on embedded nanoporous AlGaN distributed Bragg reflectors (DBR) by electrochemical etching. The porous DBR had a reflectance of 93.5% at the central wavelength of 365 nm; this is the highest value of porous AlGaN DBRs below 370 nm which has been reported so far. An innovative two-step etching method with a SiO<sub>2</sub> sidewall protection layer (SPL) was proposed to protect the n-AlGaN layer and active region of UV LED from being etched by the electrolyte. The DBR-LED with SPL showed 54.3% improvement of maximal external quantum efficiency (EQE) and 65.7% enhancement of optical power at 100 mA without any degeneration in electrical properties, compared with the un-etched standard LED sample. This work has paved the way for the application of electrically-pumped UV LEDs and VCSELs based on nanoporous AlGaN DBRs.https://www.mdpi.com/2079-4991/9/6/862365 nm UV LEDnanoporous AlGaN DBRtwo-step etchingsidewall protection layerDBR-LEDelectrically pumped
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Xingdong Lu Jing Li Kang Su Chang Ge Zhicong Li Teng Zhan Guohong Wang Jinmin Li
spellingShingle	Xingdong Lu Jing Li Kang Su Chang Ge Zhicong Li Teng Zhan Guohong Wang Jinmin Li Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors Nanomaterials 365 nm UV LED nanoporous AlGaN DBR two-step etching sidewall protection layer DBR-LED electrically pumped
author_facet	Xingdong Lu Jing Li Kang Su Chang Ge Zhicong Li Teng Zhan Guohong Wang Jinmin Li
author_sort	Xingdong Lu
title	Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors
title_short	Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors
title_full	Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors
title_fullStr	Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors
title_full_unstemmed	Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors
title_sort	performance-enhanced 365 nm uv leds with electrochemically etched nanoporous algan distributed bragg reflectors
publisher	MDPI AG
series	Nanomaterials
issn	2079-4991
publishDate	2019-06-01
description	A 365-nm UV LED was fabricated based on embedded nanoporous AlGaN distributed Bragg reflectors (DBR) by electrochemical etching. The porous DBR had a reflectance of 93.5% at the central wavelength of 365 nm; this is the highest value of porous AlGaN DBRs below 370 nm which has been reported so far. An innovative two-step etching method with a SiO<sub>2</sub> sidewall protection layer (SPL) was proposed to protect the n-AlGaN layer and active region of UV LED from being etched by the electrolyte. The DBR-LED with SPL showed 54.3% improvement of maximal external quantum efficiency (EQE) and 65.7% enhancement of optical power at 100 mA without any degeneration in electrical properties, compared with the un-etched standard LED sample. This work has paved the way for the application of electrically-pumped UV LEDs and VCSELs based on nanoporous AlGaN DBRs.
topic	365 nm UV LED nanoporous AlGaN DBR two-step etching sidewall protection layer DBR-LED electrically pumped
url	https://www.mdpi.com/2079-4991/9/6/862
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Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors

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