Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications

This paper presents a two-dimensional FEM (Finite Element Method) modeling and simulation of a surface acoustic wave (SAW) resonator based on a layered Pt/AlN/Sapphire structure. Such structure that exploits the electromechanical coupling of piezoelectric film is of high interest for harsh environme...

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Main Authors: Asseko Ondo Jean Claude, Blampain Eloi Jean Jacques, N’tchayi Mbourou Gaston, Traore Ndama Adoum, Obame Ndong Elysée, Elmazria Omar
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Electronics
Subjects:
FEM
SAW
IDT
Online Access:https://www.mdpi.com/2079-9292/10/4/370
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spelling doaj-23b491a2466849659cdc0615b1cb6cdd2021-02-04T00:02:49ZengMDPI AGElectronics2079-92922021-02-011037037010.3390/electronics10040370Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor ApplicationsAsseko Ondo Jean Claude0Blampain Eloi Jean Jacques1N’tchayi Mbourou Gaston2Traore Ndama Adoum3Obame Ndong Elysée4Elmazria Omar5Laboratoire Modélisation et Simulation de Composants (LMSC), Faculté des Sciences, Université des Sciences et Techniques de Masuku (USTM), BP 941 Franceville, GabonLaboratoire Modélisation et Simulation de Composants (LMSC), Faculté des Sciences, Université des Sciences et Techniques de Masuku (USTM), BP 941 Franceville, GabonLaboratoire Modélisation et Simulation de Composants (LMSC), Faculté des Sciences, Université des Sciences et Techniques de Masuku (USTM), BP 941 Franceville, GabonDepartment of Electrical Engineering, Ecole Polytechnique, Université des Sciences et Techniques de Masuku (USTM), BP 941 Franceville, GabonDepartment of Electrical Engineering, Ecole Polytechnique, Université des Sciences et Techniques de Masuku (USTM), BP 941 Franceville, GabonIJL—Institut Jean Lamour, UMR 7198, Université de Lorraine—CNRS, 54000 Nancy, FranceThis paper presents a two-dimensional FEM (Finite Element Method) modeling and simulation of a surface acoustic wave (SAW) resonator based on a layered Pt/AlN/Sapphire structure. Such structure that exploits the electromechanical coupling of piezoelectric film is of high interest for harsh environments. By harsh environment we mean any environment that could hinder the operation of the device. Hardness can come from a variety of sources, and examples include the following: High pressure, High temperature, Shock/high vibration, Radiation, Harsh chemicals, etc. As part of this work, we are looking for high temperature sensor applications and only operating drifts due to temperature will be studied. SAW resonator is made from piezoelectric thin film Aluminum Nitride (AlN) layer on Sapphire substrate. Modal analysis is used to determine the eigen mode and the eigenfrequency of the system and the study of the frequency domain is used to determine the response of the model under influence of a harmonic excitation for one or more frequencies. In the FEM modeling, various parameters of the surface waves in the films, such as the surface velocity, the displacement of the piezoelectric thin film, the electrical potential, the electromechanical coefficient (<i>k<sup>2</sup></i>), and the quality factor (<i>Q</i>) were studied. A comparative study between modeled and experimental curves showed a good agreement and allowed to validate our simulation method. Finally, a FEM study of the influence of normalized thickness of AlN thin film on resonator performances was carried out and compared with theorical results of literature.https://www.mdpi.com/2079-9292/10/4/370FEMSAWresonatorpiezoelectric materialIDTaluminum nitride
collection DOAJ
language English
format Article
sources DOAJ
author Asseko Ondo Jean Claude
Blampain Eloi Jean Jacques
N’tchayi Mbourou Gaston
Traore Ndama Adoum
Obame Ndong Elysée
Elmazria Omar
spellingShingle Asseko Ondo Jean Claude
Blampain Eloi Jean Jacques
N’tchayi Mbourou Gaston
Traore Ndama Adoum
Obame Ndong Elysée
Elmazria Omar
Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications
Electronics
FEM
SAW
resonator
piezoelectric material
IDT
aluminum nitride
author_facet Asseko Ondo Jean Claude
Blampain Eloi Jean Jacques
N’tchayi Mbourou Gaston
Traore Ndama Adoum
Obame Ndong Elysée
Elmazria Omar
author_sort Asseko Ondo Jean Claude
title Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications
title_short Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications
title_full Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications
title_fullStr Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications
title_full_unstemmed Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications
title_sort modeling and electrical characterization of a bilayer pt/aln/sapphire one port resonator for sensor applications
publisher MDPI AG
series Electronics
issn 2079-9292
publishDate 2021-02-01
description This paper presents a two-dimensional FEM (Finite Element Method) modeling and simulation of a surface acoustic wave (SAW) resonator based on a layered Pt/AlN/Sapphire structure. Such structure that exploits the electromechanical coupling of piezoelectric film is of high interest for harsh environments. By harsh environment we mean any environment that could hinder the operation of the device. Hardness can come from a variety of sources, and examples include the following: High pressure, High temperature, Shock/high vibration, Radiation, Harsh chemicals, etc. As part of this work, we are looking for high temperature sensor applications and only operating drifts due to temperature will be studied. SAW resonator is made from piezoelectric thin film Aluminum Nitride (AlN) layer on Sapphire substrate. Modal analysis is used to determine the eigen mode and the eigenfrequency of the system and the study of the frequency domain is used to determine the response of the model under influence of a harmonic excitation for one or more frequencies. In the FEM modeling, various parameters of the surface waves in the films, such as the surface velocity, the displacement of the piezoelectric thin film, the electrical potential, the electromechanical coefficient (<i>k<sup>2</sup></i>), and the quality factor (<i>Q</i>) were studied. A comparative study between modeled and experimental curves showed a good agreement and allowed to validate our simulation method. Finally, a FEM study of the influence of normalized thickness of AlN thin film on resonator performances was carried out and compared with theorical results of literature.
topic FEM
SAW
resonator
piezoelectric material
IDT
aluminum nitride
url https://www.mdpi.com/2079-9292/10/4/370
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