Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors
This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature...
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doaj-2456b7f0d0234310992bf9f8a6741fc82020-11-25T01:04:33ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862019-05-011011125113010.3762/bjnano.10.1122190-4286-10-112Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistorsDapeng Wang0Mamoru Furuta1Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for AdvancedEnergy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, ChinaSchool of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanThis study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature treatment maintains a high density of defects in the IGZO bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device. The hysteresis after negative-bias-illumination-stress (NBIS) is quantitatively investigated by using the double-scan mode and a positive gate pulse. Despite the abnormal transfer properties in the low-temperature-treated device, the excited holes are identically trapped at the front interface irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT.https://doi.org/10.3762/bjnano.10.112metal oxidephoto-induced instabilitiesphoton energythermal annealingthin-film transistor (TFT) device |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Dapeng Wang Mamoru Furuta |
spellingShingle |
Dapeng Wang Mamoru Furuta Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors Beilstein Journal of Nanotechnology metal oxide photo-induced instabilities photon energy thermal annealing thin-film transistor (TFT) device |
author_facet |
Dapeng Wang Mamoru Furuta |
author_sort |
Dapeng Wang |
title |
Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors |
title_short |
Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors |
title_full |
Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors |
title_fullStr |
Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors |
title_full_unstemmed |
Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors |
title_sort |
quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-ingazno thin-film transistors |
publisher |
Beilstein-Institut |
series |
Beilstein Journal of Nanotechnology |
issn |
2190-4286 |
publishDate |
2019-05-01 |
description |
This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature treatment maintains a high density of defects in the IGZO bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device. The hysteresis after negative-bias-illumination-stress (NBIS) is quantitatively investigated by using the double-scan mode and a positive gate pulse. Despite the abnormal transfer properties in the low-temperature-treated device, the excited holes are identically trapped at the front interface irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT. |
topic |
metal oxide photo-induced instabilities photon energy thermal annealing thin-film transistor (TFT) device |
url |
https://doi.org/10.3762/bjnano.10.112 |
work_keys_str_mv |
AT dapengwang quantitativeanalysisofannealinginducedinstabilitiesofphotoleakagecurrentandnegativebiasilluminationstressinaingaznothinfilmtransistors AT mamorufuruta quantitativeanalysisofannealinginducedinstabilitiesofphotoleakagecurrentandnegativebiasilluminationstressinaingaznothinfilmtransistors |
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1725197349044617216 |