Van der Waals negative capacitance transistors

The adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS wit...

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Main Authors: Xiaowei Wang, Peng Yu, Zhendong Lei, Chao Zhu, Xun Cao, Fucai Liu, Lu You, Qingsheng Zeng, Ya Deng, Jiadong Zhou, Qundong Fu, Junling Wang, Yizhong Huang, Zheng Liu
Format: Article
Language:English
Published: Nature Publishing Group 2019-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-10738-4
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spelling doaj-2595002f975944a99cba9301ecb5fe732021-05-11T11:47:17ZengNature Publishing GroupNature Communications2041-17232019-07-011011810.1038/s41467-019-10738-4Van der Waals negative capacitance transistorsXiaowei Wang0Peng Yu1Zhendong Lei2Chao Zhu3Xun Cao4Fucai Liu5Lu You6Qingsheng Zeng7Ya Deng8Chao Zhu9Jiadong Zhou10Qundong Fu11Junling Wang12Yizhong Huang13Zheng Liu14School of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversityNUS Graduate School for Integrative Sciences & Engineering, National University of SingaporeSchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversityThe adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS with a minimum sub-threshold slope of 28 mV/dec and high gain logic invertors.https://doi.org/10.1038/s41467-019-10738-4
collection DOAJ
language English
format Article
sources DOAJ
author Xiaowei Wang
Peng Yu
Zhendong Lei
Chao Zhu
Xun Cao
Fucai Liu
Lu You
Qingsheng Zeng
Ya Deng
Chao Zhu
Jiadong Zhou
Qundong Fu
Junling Wang
Yizhong Huang
Zheng Liu
spellingShingle Xiaowei Wang
Peng Yu
Zhendong Lei
Chao Zhu
Xun Cao
Fucai Liu
Lu You
Qingsheng Zeng
Ya Deng
Chao Zhu
Jiadong Zhou
Qundong Fu
Junling Wang
Yizhong Huang
Zheng Liu
Van der Waals negative capacitance transistors
Nature Communications
author_facet Xiaowei Wang
Peng Yu
Zhendong Lei
Chao Zhu
Xun Cao
Fucai Liu
Lu You
Qingsheng Zeng
Ya Deng
Chao Zhu
Jiadong Zhou
Qundong Fu
Junling Wang
Yizhong Huang
Zheng Liu
author_sort Xiaowei Wang
title Van der Waals negative capacitance transistors
title_short Van der Waals negative capacitance transistors
title_full Van der Waals negative capacitance transistors
title_fullStr Van der Waals negative capacitance transistors
title_full_unstemmed Van der Waals negative capacitance transistors
title_sort van der waals negative capacitance transistors
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2019-07-01
description The adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS with a minimum sub-threshold slope of 28 mV/dec and high gain logic invertors.
url https://doi.org/10.1038/s41467-019-10738-4
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