The effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramics

La/Mn-codoped BaTiO3 systems, obtained by solid state reactions, were investigated regarding their microstructure characteristics and ferroelectric properties. Different concentrations of La2O3 were used for doping, ranging from 0.1 to 5.0 at% La, while a content of Mn was constant at 0.05 at%. For...

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Main Authors: Živković Lj.M., Paunović V.V., Stamenkov N.Lj., Miljković M.M.
Format: Article
Language:English
Published: International Institute for the Science of Sintering, Beograd 2006-01-01
Series:Science of Sintering
Subjects:
Online Access:http://www.doiserbia.nb.rs/img/doi/0350-820X/2006/0350-820X0603273Z.pdf
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spelling doaj-261c84a8f84c4bb8bf4a9e6224b2c8e42020-11-25T01:45:43ZengInternational Institute for the Science of Sintering, BeogradScience of Sintering0350-820X2006-01-0138327328110.2298/SOS0603273ZThe effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramicsŽivković Lj.M.Paunović V.V.Stamenkov N.Lj.Miljković M.M.La/Mn-codoped BaTiO3 systems, obtained by solid state reactions, were investigated regarding their microstructure characteristics and ferroelectric properties. Different concentrations of La2O3 were used for doping, ranging from 0.1 to 5.0 at% La, while a content of Mn was constant at 0.05 at%. For all samples sintered below the eutectic temperature (1332°C), a uniform microstructure was formed with average grain size from 1-3 μm. The appearance of secondary abnormal grains with (111) double twins grains with curved or faceted grain boundaries were observed in La/Mn BaTiO3 ceramics after sintering at temperatures above the eutectic temperature. All sintered samples exhibited a high electrical resistivity. Better dielectric performances were obtained for low doped samples (0.1 at% La) sintered at 1350°C. For samples with La content above 1.0 at% a lower value in dielectric permittivity at higher sintering temperature is due to secondary abnormal grain growth, and to the presence of a non-ferroelectric phase rich in La. The Curie constant together with other dielectric parameters were also calculated. http://www.doiserbia.nb.rs/img/doi/0350-820X/2006/0350-820X0603273Z.pdfLa-doped BaTiO3microstructuregrain growthdomainsdielectric constant
collection DOAJ
language English
format Article
sources DOAJ
author Živković Lj.M.
Paunović V.V.
Stamenkov N.Lj.
Miljković M.M.
spellingShingle Živković Lj.M.
Paunović V.V.
Stamenkov N.Lj.
Miljković M.M.
The effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramics
Science of Sintering
La-doped BaTiO3
microstructure
grain growth
domains
dielectric constant
author_facet Živković Lj.M.
Paunović V.V.
Stamenkov N.Lj.
Miljković M.M.
author_sort Živković Lj.M.
title The effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramics
title_short The effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramics
title_full The effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramics
title_fullStr The effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramics
title_full_unstemmed The effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramics
title_sort effect of secondary abnormal grain growth on the dielectric properties of la/mn co-doped batio3 ceramics
publisher International Institute for the Science of Sintering, Beograd
series Science of Sintering
issn 0350-820X
publishDate 2006-01-01
description La/Mn-codoped BaTiO3 systems, obtained by solid state reactions, were investigated regarding their microstructure characteristics and ferroelectric properties. Different concentrations of La2O3 were used for doping, ranging from 0.1 to 5.0 at% La, while a content of Mn was constant at 0.05 at%. For all samples sintered below the eutectic temperature (1332°C), a uniform microstructure was formed with average grain size from 1-3 μm. The appearance of secondary abnormal grains with (111) double twins grains with curved or faceted grain boundaries were observed in La/Mn BaTiO3 ceramics after sintering at temperatures above the eutectic temperature. All sintered samples exhibited a high electrical resistivity. Better dielectric performances were obtained for low doped samples (0.1 at% La) sintered at 1350°C. For samples with La content above 1.0 at% a lower value in dielectric permittivity at higher sintering temperature is due to secondary abnormal grain growth, and to the presence of a non-ferroelectric phase rich in La. The Curie constant together with other dielectric parameters were also calculated.
topic La-doped BaTiO3
microstructure
grain growth
domains
dielectric constant
url http://www.doiserbia.nb.rs/img/doi/0350-820X/2006/0350-820X0603273Z.pdf
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