A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor

A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor

A new photodetector designed for Quanta image sensor application is proposed. The photodetector is a backside-illuminated, buried photodiode with a vertically integrated pump and transfer gate and a distal floating diffusion to reduce parasitic capacitance. The structure features compact layout and...

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Bibliographic Details
Main Authors: Jiaju Ma, Eric R. Fossum
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
CMOS image sensor
Quanta Image Sensor
jot
pump gate
full well capacity
high conversion gain
Online Access:https://ieeexplore.ieee.org/document/7006672/
Description
Summary:A new photodetector designed for Quanta image sensor application is proposed. The photodetector is a backside-illuminated, buried photodiode with a vertically integrated pump and transfer gate and a distal floating diffusion to reduce parasitic capacitance. The structure features compact layout and high conversion gain. The proposed device is modeled and simulated, and its performance characteristics estimated.
ISSN:2168-6734

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