<b>Characterization of nanocrystalline silicon germanium film and nanotube in adsorption gas by Monte Carlo and Langevin dynamic simulation</b>
The nanocrystalline silicon-germanium films (Si/Ge) and Si/Ge nanotubes have low band gaps and high carrier mobility, thus offering appealing potential for absorbing gas molecules. Interaction between hydrogen molecules and bare as well as functionalized Si/Ge nanofilm and nanotube was investigated...
Main Authors: | M. Monajjemi, L. Mahdavian, F. Mollaamin |
---|---|
Format: | Article |
Language: | English |
Published: |
Chemical Society of Ethiopia
2008-08-01
|
Series: | Bulletin of the Chemical Society of Ethiopia |
Subjects: | |
Online Access: | http://www.ajol.info/index.php/bcse/article/view/61299 |
Similar Items
-
On the effects of total ionizing dose in silicon-germanium BiCMOS platforms
by: Fleetwood, Zachary E.
Published: (2015) -
A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO₂/Ge and Si-cap/Ge Gate Stack
by: Rui Gao, et al.
Published: (2021-01-01) -
Etude des mécanismes de nanogravure par FIB-LMAIS
by: Claude, Jean-Benoît
Published: (2017) -
Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p<sup>+</sup>/n Junction Formation
by: Konstantinos Garidis, et al.
Published: (2020-03-01) -
Microwave-assisted and regular leaching of germanium from the germanium-rich lignite ash
by: Chen Yuqian, et al.
Published: (2018-11-01)