Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot Line
PECVD silicon nitride photonic wire waveguides have been fabricated in a CMOS pilot line. Both clad and unclad single mode wire waveguides were measured at λ = 532, 780, and 900 nm, respectively. The dependence of loss on wire width, wavelength, and cladding is discussed in detail. Cladde...
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/6674990/ |
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doaj-27f1ab0a074c492ab91d863de79fd92a2021-03-29T17:15:35ZengIEEEIEEE Photonics Journal1943-06552013-01-01562202809220280910.1109/JPHOT.2013.22926986674990Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot LineA. Z. Subramanian0P. Neutens1A. Dhakal2R. Jansen3T. Claes4X. Rottenberg5F. Peyskens6S. Selvaraja7P. Helin8B. DuBois9K. Leyssens10S. Severi11P. Deshpande12R. Baets13P. Van Dorpe14<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula> Photonics Research Group, Ghent University-IMEC, Ghent , Belgium<formula formulatype="inline"><tex Notation="TeX">$^{3}$</tex></formula>IMEC, Leuven, BelgiumPhotonics Research Group, Ghent University-IMEC, Ghent, BelgiumIMEC, Leuven, BelgiumIMEC, Leuven, BelgiumIMEC, Leuven, BelgiumPhotonics Research Group, Ghent University-IMEC, Ghent, BelgiumPhotonics Research Group, Ghent University-IMEC, Ghent, BelgiumIMEC, Leuven, BelgiumIMEC, Leuven, BelgiumIMEC, Leuven, BelgiumIMEC, Leuven, BelgiumIMEC, Leuven, Belgium<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula> Photonics Research Group, Ghent University-IMEC, Ghent , BelgiumIMEC, Leuven, BelgiumPECVD silicon nitride photonic wire waveguides have been fabricated in a CMOS pilot line. Both clad and unclad single mode wire waveguides were measured at λ = 532, 780, and 900 nm, respectively. The dependence of loss on wire width, wavelength, and cladding is discussed in detail. Cladded multimode and singlemode waveguides show a loss well below 1 dB/cm in the 532-900 nm wavelength range. For singlemode unclad waveguides, losses 1 dB/cm were achieved at λ = 900 nm, whereas losses were measured in the range of 1-3 dB/cm for λ = 780 and 532 nm, respectively.https://ieeexplore.ieee.org/document/6674990/Waveguideswaveguide devicesfabrication and characterizationphotonic materialsgratings |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
A. Z. Subramanian P. Neutens A. Dhakal R. Jansen T. Claes X. Rottenberg F. Peyskens S. Selvaraja P. Helin B. DuBois K. Leyssens S. Severi P. Deshpande R. Baets P. Van Dorpe |
| spellingShingle |
A. Z. Subramanian P. Neutens A. Dhakal R. Jansen T. Claes X. Rottenberg F. Peyskens S. Selvaraja P. Helin B. DuBois K. Leyssens S. Severi P. Deshpande R. Baets P. Van Dorpe Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot Line IEEE Photonics Journal Waveguides waveguide devices fabrication and characterization photonic materials gratings |
| author_facet |
A. Z. Subramanian P. Neutens A. Dhakal R. Jansen T. Claes X. Rottenberg F. Peyskens S. Selvaraja P. Helin B. DuBois K. Leyssens S. Severi P. Deshpande R. Baets P. Van Dorpe |
| author_sort |
A. Z. Subramanian |
| title |
Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot Line |
| title_short |
Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot Line |
| title_full |
Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot Line |
| title_fullStr |
Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot Line |
| title_full_unstemmed |
Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot Line |
| title_sort |
low-loss singlemode pecvd silicon nitride photonic wire waveguides for 532–900 nm wavelength window fabricated within a cmos pilot line |
| publisher |
IEEE |
| series |
IEEE Photonics Journal |
| issn |
1943-0655 |
| publishDate |
2013-01-01 |
| description |
PECVD silicon nitride photonic wire waveguides have been fabricated in a CMOS pilot line. Both clad and unclad single mode wire waveguides were measured at λ = 532, 780, and 900 nm, respectively. The dependence of loss on wire width, wavelength, and cladding is discussed in detail. Cladded multimode and singlemode waveguides show a loss well below 1 dB/cm in the 532-900 nm wavelength range. For singlemode unclad waveguides, losses 1 dB/cm were achieved at λ = 900 nm, whereas losses were measured in the range of 1-3 dB/cm for λ = 780 and 532 nm, respectively. |
| topic |
Waveguides waveguide devices fabrication and characterization photonic materials gratings |
| url |
https://ieeexplore.ieee.org/document/6674990/ |
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