Comparative Study About the Structural Properties of ZnO Films Grown on Si, GaAs, And Al2O3 Substrates and a GaN Template

• Main Authors: Jang T.S., Lee S.M., Kim K.B., Oh D.C.
• Format: Article
• Language: English
• Published: EDP Sciences 2016-01-01
• Series: MATEC Web of Conferences
• Online Access: http://dx.doi.org/10.1051/matecconf/20167801107

We report on the structural properties of ZnO films grown on (001) Si, (001) GaAs, (0001) Al2O3 substrates and a (0001) GaN template by RF-sputtering. It is observed that all the ZnO films have textured structures with a preferred orientation of the c-axis, irrespective growth conditions, in terms of atomic-force microscope and wide-range X-ray diffractometer. However, it is found that the ZnO films in the ZnO-on-Si and ZnO-on-GaAs are consisted of various domains with different orientations, while the ZnO films in the ZnO-on-Al2O3 and ZnO-on-GaN are consisted of a single domain with the same orientation in terms of the φ-scan of X-ray diffractometer. Moreover, it is found that the ZnO-on-GaN has smaller edge dislocation density and screw dislocation density than the ZnO-on-Al2O3, which seriously depends on substrate temperature, in terms of the ω-scan of X-ray diffractometer.