Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions

Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions

Silicon waveguides embedded in lateral p-n junctions show field-induced optical nonlinearities. By properly polarizing the junction, these can be used to achieve electro-optic modulation through the Direct Current Kerr effect. In addition, these enable second-order nonlinear processes such as the el...

Full description

Bibliographic Details
Main Authors: Claudio Castellan, Riccardo Franchi, Stefano Biasi, Martino Bernard, Mher Ghulinyan, Lorenzo Pavesi
Format: Article
Language:English
Published: Frontiers Media S.A. 2019-07-01
Series:Frontiers in Physics
Subjects:
nonlinear optics
silicon photonics
Kerr effect
field-induced nonlineatiries
plasma-dispersion effect
p-n junctions
Online Access:https://www.frontiersin.org/article/10.3389/fphy.2019.00104/full

Internet

https://www.frontiersin.org/article/10.3389/fphy.2019.00104/full

Similar Items