Comparison of Low Field Electron Transport in Zincblende and Wurtzite SiC Structures for High Gain Device Modeling
Temperature and doping dependencies of electron mobility in both wurtzite and zincblende SiC structures have been calculated using an iteravive technique. The following scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon, piezoelectric and electron plasmon are inculded in th...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Stefan cel Mare University of Suceava
2011-01-01
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| Series: | Journal of Applied Computer Science & Mathematics |
| Subjects: | |
| Online Access: | http://jacs.usv.ro/getpdf.php?issue=10&paperid=1015 |