Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy
In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunne...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2012-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://iopscience.iop.org/1468-6996/13/1/013002 |
| Summary: | In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. |
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| ISSN: | 1468-6996 1878-5514 |