Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350°C, and...

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Main Authors: Chen Z.X., Li X., Li W.-M., Lo G.-Q.
Format: Article
Language:English
Published: EDP Sciences 2016-01-01
Series:MATEC Web of Conferences
Online Access:http://dx.doi.org/10.1051/matecconf/20163901010
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spelling doaj-2d638c7d32e54d62b4df07dd7f68a3202021-02-02T06:52:07ZengEDP SciencesMATEC Web of Conferences2261-236X2016-01-01390101010.1051/matecconf/20163901010matecconf_iccme2016_01010Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)Chen Z.X.0Li X.1Li W.-M.Lo G.-Q.2Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research)Picosun Asia Pte. Ltd.Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research)This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350°C, and plasma times, from 5-30s, on deposition rate, resistivity, carbon content, N/Ti ratio and film density. The lowest resistivity of ~ 250 μΩ.cm was achieved at substrate temperatures 300-350°C and plasma time of 20s. At low substrate temperatures, although deposition was possible, carbon concentration was found to be higher, which thus affects film resistivity and density.http://dx.doi.org/10.1051/matecconf/20163901010
collection DOAJ
language English
format Article
sources DOAJ
author Chen Z.X.
Li X.
Li W.-M.
Lo G.-Q.
spellingShingle Chen Z.X.
Li X.
Li W.-M.
Lo G.-Q.
Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
MATEC Web of Conferences
author_facet Chen Z.X.
Li X.
Li W.-M.
Lo G.-Q.
author_sort Chen Z.X.
title Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
title_short Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
title_full Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
title_fullStr Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
title_full_unstemmed Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
title_sort plasma-enhanced atomic layer deposition (peald) of tin using the organic precursor tetrakis(ethylmethylamido)titanium (temat)
publisher EDP Sciences
series MATEC Web of Conferences
issn 2261-236X
publishDate 2016-01-01
description This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350°C, and plasma times, from 5-30s, on deposition rate, resistivity, carbon content, N/Ti ratio and film density. The lowest resistivity of ~ 250 μΩ.cm was achieved at substrate temperatures 300-350°C and plasma time of 20s. At low substrate temperatures, although deposition was possible, carbon concentration was found to be higher, which thus affects film resistivity and density.
url http://dx.doi.org/10.1051/matecconf/20163901010
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AT lix plasmaenhancedatomiclayerdepositionpealdoftinusingtheorganicprecursortetrakisethylmethylamidotitaniumtemat
AT liwm plasmaenhancedatomiclayerdepositionpealdoftinusingtheorganicprecursortetrakisethylmethylamidotitaniumtemat
AT logq plasmaenhancedatomiclayerdepositionpealdoftinusingtheorganicprecursortetrakisethylmethylamidotitaniumtemat
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