Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory

Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory

The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric. High program/erase speed as well as large shift of the threshold v...

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Main Authors: Hao Ji, Yehui Wei, Pengfei Ma, Ran Jiang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Hafnium oxide
charge trapping memory
NAND flash memory
Online Access:https://ieeexplore.ieee.org/document/8102992/
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spelling doaj-2f55233353ac4b61bf0033e8351bbfae2021-03-29T18:45:33ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-016818410.1109/JEDS.2017.27719568102992Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash MemoryHao Ji0Yehui Wei1Pengfei Ma2Ran Jiang3https://orcid.org/0000-0001-5465-4008School of Microelectronics, Shandong University, Jinan, ChinaSchool of Microelectronics, Shandong University, Jinan, ChinaSchool of Microelectronics, Shandong University, Jinan, ChinaSchool of Microelectronics, Shandong University, Jinan, ChinaThe charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric. High program/erase speed as well as large shift of the threshold voltage were obtained. Charges injection was improved according to the constant current stress measurement. The application of separated charge trapping layer can considerably improve the performance of charge trapping memory.https://ieeexplore.ieee.org/document/8102992/Hafnium oxidecharge trapping memoryNAND flash memory
collection DOAJ
language English
format Article
sources DOAJ
author Hao Ji
Yehui Wei
Pengfei Ma
Ran Jiang
spellingShingle Hao Ji
Yehui Wei
Pengfei Ma
Ran Jiang
Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory
IEEE Journal of the Electron Devices Society
Hafnium oxide
charge trapping memory
NAND flash memory
author_facet Hao Ji
Yehui Wei
Pengfei Ma
Ran Jiang
author_sort Hao Ji
title Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory
title_short Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory
title_full Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory
title_fullStr Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory
title_full_unstemmed Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory
title_sort improvement of charge injection by using separated sin as charge trapping layer in monos charge trap flash memory
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2018-01-01
description The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric. High program/erase speed as well as large shift of the threshold voltage were obtained. Charges injection was improved according to the constant current stress measurement. The application of separated charge trapping layer can considerably improve the performance of charge trapping memory.
topic Hafnium oxide
charge trapping memory
NAND flash memory
url https://ieeexplore.ieee.org/document/8102992/
work_keys_str_mv AT haoji improvementofchargeinjectionbyusingseparatedsinaschargetrappinglayerinmonoschargetrapflashmemory
AT yehuiwei improvementofchargeinjectionbyusingseparatedsinaschargetrappinglayerinmonoschargetrapflashmemory
AT pengfeima improvementofchargeinjectionbyusingseparatedsinaschargetrappinglayerinmonoschargetrapflashmemory
AT ranjiang improvementofchargeinjectionbyusingseparatedsinaschargetrappinglayerinmonoschargetrapflashmemory
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