MODEL OF BORON CLUSTERING IN SILICON
The model of formation and dissolution of neutral boron clusters in silicon has been developed. Numerical calculations showed that the model proposed describes well the experimental data obtained for rapid thermal annealing. Agreement with experiment is observed for clusters incorporating a small nu...
Main Author: | O. I. Velichko |
---|---|
Format: | Article |
Language: | Russian |
Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
|
Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
Subjects: | |
Online Access: | https://doklady.bsuir.by/jour/article/view/808 |
Similar Items
-
Impurity band photoconductivity in Boron-doped silicon
by: Scott, Myrsyl Walter
Published: (2011) -
Effect of strains and electronic fields on the acceptor states in boron-doped silicon
by: White, James Judson
Published: (2011) -
Effect of Silicon Application on Wheat Under Boron Stress
by: Ibrahim Ertan ERKAN
Published: (2019-12-01) -
A model for boron diffusion into silicon: the effect of oxide growth
by: Winton, MIchael Calhoun, 1945-
Published: (1973) -
Nonlinear optical spectroscopy of silicon-boron and other silicon-adsorbate systems
by: Lim, Daeyoung
Published: (2011)