| Summary: | The magnetorefractive effect (MRE) is important and interesting from both fundamental and practical points of view. This effect consists in a change in the reflection coefficient or the passage of an electromagnetic wave from magnetized structures with magnetoresistance effects. It can be giant, tunnel and colossal magnetoresistance depending on the type of structure. MRE is most clearly manifested in the IR region of the spectrum and can reach tens of percent. It is possible to show its unambiguous dependence on the magnitude of the magnetoresistance. This article discusses the features of MRE in multilayer metal nanostructures with giant magnetoresistance. The MRE simulation is carried out using a model that relates this effect to magnetoresistance, as well as in the framework of the model taking into account spin-dependent scattering. The last model in earlier works allowed describing a number of experimental data well qualitatively and in some places quantitatively. In this paper, taking into account the frequency dependence of the resistance allowed us to improve the first model, which allowed us to obtain a good qualitative and quantitative description of the effect value – this is a fundamentally new result. The article highlighted the key opportunity for the application of magnetorefractive effect as a contactless method to study nanostructures, a method of nondestructive testing of all electronic components. A comparison with experimental data is also made. A good description is demonstrated in the framework of the two models considered, which can effectively describe the relationship between MRE and magnetoresistance.
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