Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure
The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from -25 to 400ºC. The research was performed using device-technological simulation. The active l...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Politehperiodika
2017-04-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2017/1-2_2017/pdf/05.pdf |
| Summary: | The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from -25 to 400ºC. The research was performed using device-technological simulation. The active layer of the proposed structure is a two-dimensional electron gas region, which is formed between the barrier layer Al0,3Ga0,7N and the undoped GaN channel layer. The results (room temperature current-related magnetic sensitivity 66.4 V/(A·T) and very low temperature cross sensitivity of 0,0273%/ºC) indicate the prospects of the proposed solutions for the practical use. |
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| ISSN: | 2225-5818 2309-9992 |