Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors

Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors

Abstract We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considere...

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Main Authors: Jiaying Mai, Naiwei Tang, Waner He, Zhengmiao Zou, Chunlai Luo, Aihua Zhang, Zhen Fan, Sujuan Wu, Min Zeng, Jinwei Gao, Guofu Zhou, Xubing Lu, J-M Liu
Format: Article
Language:English
Published: SpringerOpen 2019-05-01
Series:Nanoscale Research Letters
Subjects:
Solution process
C8-BTBT
Thin-film transistors
Air stability
Ambient gases
Online Access:http://link.springer.com/article/10.1186/s11671-019-3007-x
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record_format Article
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language English
format Article
sources DOAJ
author Jiaying Mai
Naiwei Tang
Waner He
Zhengmiao Zou
Chunlai Luo
Aihua Zhang
Zhen Fan
Sujuan Wu
Min Zeng
Jinwei Gao
Guofu Zhou
Xubing Lu
J-M Liu
spellingShingle Jiaying Mai
Naiwei Tang
Waner He
Zhengmiao Zou
Chunlai Luo
Aihua Zhang
Zhen Fan
Sujuan Wu
Min Zeng
Jinwei Gao
Guofu Zhou
Xubing Lu
J-M Liu
Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors
Nanoscale Research Letters
Solution process
C8-BTBT
Thin-film transistors
Air stability
Ambient gases
author_facet Jiaying Mai
Naiwei Tang
Waner He
Zhengmiao Zou
Chunlai Luo
Aihua Zhang
Zhen Fan
Sujuan Wu
Min Zeng
Jinwei Gao
Guofu Zhou
Xubing Lu
J-M Liu
author_sort Jiaying Mai
title Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors
title_short Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors
title_full Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors
title_fullStr Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors
title_full_unstemmed Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors
title_sort effects of ambient gases on the electrical performance of solution-processed c8-btbt thin-film transistors
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2019-05-01
description Abstract We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considered: high vacuum (HV), O2, N2, and air. The devices exposed to O2 and N2 for 2 h performed in a manner similar to that of the device kept in HV. However, the device exposed to air for 2 h exhibited significantly better electrical properties than its counterparts. The average and highest carrier mobility of the 70 air-exposed C8-BTBT TFTs were 4.82 and 8.07 cm2V-1s-1, respectively. This can be compared to 2.76 cm2V-1s-1 and 4.70 cm2V-1s-1, respectively, for the 70 devices kept in HV. Furthermore, device air stability was investigated. The electrical performance of C8-BTBT TFTs degrades after long periods of air exposure. Our work improves knowledge of charge transport behavior and mechanisms in C8-BTBT OTFTs. It also provides ideas that may help to improve device electrical performance further.
topic Solution process
C8-BTBT
Thin-film transistors
Air stability
Ambient gases
url http://link.springer.com/article/10.1186/s11671-019-3007-x
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spelling doaj-3203435139b7419984a44f952f198e262020-11-25T03:14:57ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-05-011411810.1186/s11671-019-3007-xEffects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film TransistorsJiaying Mai0Naiwei Tang1Waner He2Zhengmiao Zou3Chunlai Luo4Aihua Zhang5Zhen Fan6Sujuan Wu7Min Zeng8Jinwei Gao9Guofu Zhou10Xubing Lu11J-M Liu12Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityGuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal UniversityGuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal UniversityGuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal UniversityGuangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityGuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal UniversityAbstract We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considered: high vacuum (HV), O2, N2, and air. The devices exposed to O2 and N2 for 2 h performed in a manner similar to that of the device kept in HV. However, the device exposed to air for 2 h exhibited significantly better electrical properties than its counterparts. The average and highest carrier mobility of the 70 air-exposed C8-BTBT TFTs were 4.82 and 8.07 cm2V-1s-1, respectively. This can be compared to 2.76 cm2V-1s-1 and 4.70 cm2V-1s-1, respectively, for the 70 devices kept in HV. Furthermore, device air stability was investigated. The electrical performance of C8-BTBT TFTs degrades after long periods of air exposure. Our work improves knowledge of charge transport behavior and mechanisms in C8-BTBT OTFTs. It also provides ideas that may help to improve device electrical performance further.http://link.springer.com/article/10.1186/s11671-019-3007-xSolution processC8-BTBTThin-film transistorsAir stabilityAmbient gases

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