Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O...
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doaj-3262fc6026cc426bb8e1522f86a41a172020-11-24T22:47:18ZengAIP Publishing LLCAIP Advances2158-32262017-08-0178085208085208-610.1063/1.4986147013708ADVStudy of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devicesHuy Binh Do0Quang Ho Luc1Minh Thien Huu Ha2Sa Hoang Huynh3Tuan Anh Nguyen4Yueh Chin Lin5Edward Yi Chang6Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanThe degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2− and OH− ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.http://dx.doi.org/10.1063/1.4986147 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Huy Binh Do Quang Ho Luc Minh Thien Huu Ha Sa Hoang Huynh Tuan Anh Nguyen Yueh Chin Lin Edward Yi Chang |
spellingShingle |
Huy Binh Do Quang Ho Luc Minh Thien Huu Ha Sa Hoang Huynh Tuan Anh Nguyen Yueh Chin Lin Edward Yi Chang Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices AIP Advances |
author_facet |
Huy Binh Do Quang Ho Luc Minh Thien Huu Ha Sa Hoang Huynh Tuan Anh Nguyen Yueh Chin Lin Edward Yi Chang |
author_sort |
Huy Binh Do |
title |
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices |
title_short |
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices |
title_full |
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices |
title_fullStr |
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices |
title_full_unstemmed |
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices |
title_sort |
study of the interface stability of the metal (mo, ni, pd)/hfo2/aln/ingaas mos devices |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2017-08-01 |
description |
The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2− and OH− ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET. |
url |
http://dx.doi.org/10.1063/1.4986147 |
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