Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O...

Full description

Bibliographic Details
Main Authors: Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang
Format: Article
Language:English
Published: AIP Publishing LLC 2017-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4986147
id doaj-3262fc6026cc426bb8e1522f86a41a17
record_format Article
spelling doaj-3262fc6026cc426bb8e1522f86a41a172020-11-24T22:47:18ZengAIP Publishing LLCAIP Advances2158-32262017-08-0178085208085208-610.1063/1.4986147013708ADVStudy of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devicesHuy Binh Do0Quang Ho Luc1Minh Thien Huu Ha2Sa Hoang Huynh3Tuan Anh Nguyen4Yueh Chin Lin5Edward Yi Chang6Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanThe degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2− and OH− ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.http://dx.doi.org/10.1063/1.4986147
collection DOAJ
language English
format Article
sources DOAJ
author Huy Binh Do
Quang Ho Luc
Minh Thien Huu Ha
Sa Hoang Huynh
Tuan Anh Nguyen
Yueh Chin Lin
Edward Yi Chang
spellingShingle Huy Binh Do
Quang Ho Luc
Minh Thien Huu Ha
Sa Hoang Huynh
Tuan Anh Nguyen
Yueh Chin Lin
Edward Yi Chang
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
AIP Advances
author_facet Huy Binh Do
Quang Ho Luc
Minh Thien Huu Ha
Sa Hoang Huynh
Tuan Anh Nguyen
Yueh Chin Lin
Edward Yi Chang
author_sort Huy Binh Do
title Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
title_short Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
title_full Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
title_fullStr Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
title_full_unstemmed Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
title_sort study of the interface stability of the metal (mo, ni, pd)/hfo2/aln/ingaas mos devices
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2017-08-01
description The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2− and OH− ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.
url http://dx.doi.org/10.1063/1.4986147
work_keys_str_mv AT huybinhdo studyoftheinterfacestabilityofthemetalmonipdhfo2alningaasmosdevices
AT quangholuc studyoftheinterfacestabilityofthemetalmonipdhfo2alningaasmosdevices
AT minhthienhuuha studyoftheinterfacestabilityofthemetalmonipdhfo2alningaasmosdevices
AT sahoanghuynh studyoftheinterfacestabilityofthemetalmonipdhfo2alningaasmosdevices
AT tuananhnguyen studyoftheinterfacestabilityofthemetalmonipdhfo2alningaasmosdevices
AT yuehchinlin studyoftheinterfacestabilityofthemetalmonipdhfo2alningaasmosdevices
AT edwardyichang studyoftheinterfacestabilityofthemetalmonipdhfo2alningaasmosdevices
_version_ 1725682077871898624

Similar Items