Marrying Medicine and Materials: Artemisinin (Qinghaosu) Particle is Soft Enough for Scratching Hard SiC Wafer in Water

<p>Silicon carbide (SiC) single crystals, along with sapphire and silicon, are one of most important substrates for high-brightness LED fabrications. Owing to extremely high hardness (Mohs&rsquo; scale of 9.5) and chemical inertness, the polishing rate of SiC with conventional chemical mec...

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Main Authors: Yu-rong Zhu, Dan Zhang, Yang Gan, Fei-hu Zhang
Format: Article
Language:English
Published: ScienceOpen 2016-01-01
Series:ScienceOpen Research
Online Access:https://www.scienceopen.com/document?vid=0d3cb971-575c-4a49-9022-bb549b69f9b5
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spelling doaj-3338e74171674b2f9e3f1ffa45fabf6d2020-12-15T17:21:25ZengScienceOpenScienceOpen Research2199-10062016-01-0110.14293/S2199-1006.1.SOR-MATSCI.AMNMZS.v1Marrying Medicine and Materials: Artemisinin (Qinghaosu) Particle is Soft Enough for Scratching Hard SiC Wafer in WaterYu-rong ZhuDan ZhangYang GanFei-hu Zhang<p>Silicon carbide (SiC) single crystals, along with sapphire and silicon, are one of most important substrates for high-brightness LED fabrications. Owing to extremely high hardness (Mohs&rsquo; scale of 9.5) and chemical inertness, the polishing rate of SiC with conventional chemical mechanical polishing (CMP) methods is not high, and surface scratches are also inevitable because of using slurry containing hard abrasives such as silica particles. Here artemisinin (Qinghaosu) crystals, very soft molecular solids, were found, for the first time to the best of our knowledge, to effectively polish SiC wafers even in pure water as demonstrated by proof-of-concept scratching experiments using atomic force microscopy (AFM). The underlying mechanism is attributed to activated oxidation of SiC by mechanically released reactive &middot;OH free radicals from the endoperoxide bridges. The preliminary results reported here have important implications for developing novel alternative green and scratch-free polishing methods for hard-brittle substrates including SiC and others.</p>https://www.scienceopen.com/document?vid=0d3cb971-575c-4a49-9022-bb549b69f9b5
collection DOAJ
language English
format Article
sources DOAJ
author Yu-rong Zhu
Dan Zhang
Yang Gan
Fei-hu Zhang
spellingShingle Yu-rong Zhu
Dan Zhang
Yang Gan
Fei-hu Zhang
Marrying Medicine and Materials: Artemisinin (Qinghaosu) Particle is Soft Enough for Scratching Hard SiC Wafer in Water
ScienceOpen Research
author_facet Yu-rong Zhu
Dan Zhang
Yang Gan
Fei-hu Zhang
author_sort Yu-rong Zhu
title Marrying Medicine and Materials: Artemisinin (Qinghaosu) Particle is Soft Enough for Scratching Hard SiC Wafer in Water
title_short Marrying Medicine and Materials: Artemisinin (Qinghaosu) Particle is Soft Enough for Scratching Hard SiC Wafer in Water
title_full Marrying Medicine and Materials: Artemisinin (Qinghaosu) Particle is Soft Enough for Scratching Hard SiC Wafer in Water
title_fullStr Marrying Medicine and Materials: Artemisinin (Qinghaosu) Particle is Soft Enough for Scratching Hard SiC Wafer in Water
title_full_unstemmed Marrying Medicine and Materials: Artemisinin (Qinghaosu) Particle is Soft Enough for Scratching Hard SiC Wafer in Water
title_sort marrying medicine and materials: artemisinin (qinghaosu) particle is soft enough for scratching hard sic wafer in water
publisher ScienceOpen
series ScienceOpen Research
issn 2199-1006
publishDate 2016-01-01
description <p>Silicon carbide (SiC) single crystals, along with sapphire and silicon, are one of most important substrates for high-brightness LED fabrications. Owing to extremely high hardness (Mohs&rsquo; scale of 9.5) and chemical inertness, the polishing rate of SiC with conventional chemical mechanical polishing (CMP) methods is not high, and surface scratches are also inevitable because of using slurry containing hard abrasives such as silica particles. Here artemisinin (Qinghaosu) crystals, very soft molecular solids, were found, for the first time to the best of our knowledge, to effectively polish SiC wafers even in pure water as demonstrated by proof-of-concept scratching experiments using atomic force microscopy (AFM). The underlying mechanism is attributed to activated oxidation of SiC by mechanically released reactive &middot;OH free radicals from the endoperoxide bridges. The preliminary results reported here have important implications for developing novel alternative green and scratch-free polishing methods for hard-brittle substrates including SiC and others.</p>
url https://www.scienceopen.com/document?vid=0d3cb971-575c-4a49-9022-bb549b69f9b5
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