The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots
Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2014-01-01
|
| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2014/103640 |
| Summary: | Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations. |
|---|---|
| ISSN: | 1687-4110 1687-4129 |