The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots

The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots

Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear...

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Main Authors: Shuai Zhou, Yumin Liu, Pengfei Lu, Lihong Han, Zhongyuan Yu
Format: Article
Language:English
Published: Hindawi Limited 2014-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2014/103640
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spelling doaj-336716778f3e4d3b9b8f9e28531650cb2020-11-25T00:24:18ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292014-01-01201410.1155/2014/103640103640The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum DotsShuai Zhou0Yumin Liu1Pengfei Lu2Lihong Han3Zhongyuan Yu4State Key Laboratory of Information Photonics and Optical Communications, Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 339), Beijing 100876, ChinaState Key Laboratory of Information Photonics and Optical Communications, Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 339), Beijing 100876, ChinaState Key Laboratory of Information Photonics and Optical Communications, Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 339), Beijing 100876, ChinaState Key Laboratory of Information Photonics and Optical Communications, Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 339), Beijing 100876, ChinaState Key Laboratory of Information Photonics and Optical Communications, Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 339), Beijing 100876, ChinaTaking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations.http://dx.doi.org/10.1155/2014/103640
collection DOAJ
language English
format Article
sources DOAJ
author Shuai Zhou
Yumin Liu
Pengfei Lu
Lihong Han
Zhongyuan Yu
spellingShingle Shuai Zhou
Yumin Liu
Pengfei Lu
Lihong Han
Zhongyuan Yu
The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots
Journal of Nanomaterials
author_facet Shuai Zhou
Yumin Liu
Pengfei Lu
Lihong Han
Zhongyuan Yu
author_sort Shuai Zhou
title The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots
title_short The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots
title_full The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots
title_fullStr The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots
title_full_unstemmed The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots
title_sort formation site of noninterfacial misfit dislocations in inas/gaas quantum dots
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2014-01-01
description Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations.
url http://dx.doi.org/10.1155/2014/103640
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