High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer

• Main Authors: Jaean Kwon, Rae-Young Kim
• Format: Article
• Language: English
• Published: MDPI AG 2021-07-01
• Series: Electronics
• Subjects: cap-less parallel resonant converter; high power density; high-voltage power supply; parasitic capacitance; equivalent model analysis
• Online Access: https://www.mdpi.com/2079-9292/10/14/1736

High-voltage DC power supplies are used in several applications, including X-ray, plasma, electrostatic precipitator, and capacitor charging. However, such a high-voltage power supply has problems, such as a decrease in reliability, owing to an increase in output ripple voltage, and a decrease in power density, owing to an increase in volume. Therefore, this study proposes a method for improving the power density of a parallel resonant converter using the parasitic capacitor of the secondary side of the transformer. Due to the fact that high-voltage power supplies have many turns on the secondary side, a significant number of parasitic capacitors are generated. In addition, in the case of a parallel resonant converter, because the transformer and the primary resonant capacitor are connected in parallel, the parasitic capacitor component generated on the secondary side of the transformer can be equalized and used. A parallel cap-less resonant converter structure developed using the parasitic components of such transformers is proposed. Primary side and secondary side equivalent model analyses are conducted in order to derive new equations and gain waveforms. Finally, the validity of the proposed structure is verified experimentally.