Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions

Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions

We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodet...

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Bibliographic Details
Main Authors: Qin Lu, Li Yu, Yan Liu, Jincheng Zhang, Genquan Han, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Materials
Subjects:
low noise
mid-infrared
tunneling
heterojunction
Online Access:https://www.mdpi.com/1996-1944/12/16/2532

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